CEP02N6

CEP02N6/CEB02N6 Sep. 2002 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 2A , RDS(ON)=5Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G D G G D S S CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperautre Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 600 Unit V V A A A W W/ C C Ć 30 2 6 6 60 0.48 -55 to 150 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 4-2 RįJC RӰJA 2.1 62.5 C/W C/W CEP02N6/CEB02N6 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Single Pluse Avalanche Energy c Avalanche Current Repetitive Avalanche Energy Symbol a Condition Min Typ Max Unit 125 2 5.4 mJ A mJ 4 DRAIN-SOURCE AVALANCHE RATING IAR EAS EAR VGS = 0V,ID = 250µA VDS = 600V, VGS = 0V VGS = Ć30V, VDS = 0V VDS = VGS, ID = 250µA VGS =10V, ID = 1A VGS = 10V, VDS = 10V VDS = 50V, ID = 1A VDD = 300V, ID = 2A, VGS = 10V RGEN=18Ω 2 2 600 OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS b V 25 µA Ć100 nA 4 3.8 5.0 V Ω A 1.2 18 18 50 16 20 35 3...