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2SC5859 Datasheet, Equivalent, TYPE TRANSISTOR.

SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR

SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR

 

 

 

Part 2SC5859
Description SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR
Feature 2SC5859 TOSHIBA TRANSISTOR SILICON NPN T RIPLE DIFFUSED MESA TYPE 2SC5859 HORIZ ONTAL DEFLECTION OUTPUT FOR HDTV, DIGIT AL TV, PROJECTION TV High Voltage Low S aturation Voltage High Speed : VCBO = 1 700 V : VCE (sat) = 3 V (max) : tf(2) = 0.
1 µs (Typ.
) Unit: mm MAXIMUM RATIN GS (Tc = 25°C) CHARACTERISTIC Collecto r−Base Voltage Collector−Emitter Vo ltage Emitter−Base Voltage Collector Current Base Current Collector Power Di ssipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 1 700 750 5 23 46 11.
5 210 150 −55~150 UNIT V V V A A W °C °C .
Manufacture Toshiba
Datasheet
Download 2SC5859 Datasheet
Part 2SC5859
Description SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR
Feature 2SC5859 TOSHIBA TRANSISTOR SILICON NPN T RIPLE DIFFUSED MESA TYPE 2SC5859 HORIZ ONTAL DEFLECTION OUTPUT FOR HDTV, DIGIT AL TV, PROJECTION TV High Voltage Low S aturation Voltage High Speed : VCBO = 1 700 V : VCE (sat) = 3 V (max) : tf(2) = 0.
1 µs (Typ.
) Unit: mm MAXIMUM RATIN GS (Tc = 25°C) CHARACTERISTIC Collecto r−Base Voltage Collector−Emitter Vo ltage Emitter−Base Voltage Collector Current Base Current Collector Power Di ssipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 1 700 750 5 23 46 11.
5 210 150 −55~150 UNIT V V V A A W °C °C .
Manufacture Toshiba
Datasheet
Download 2SC5859 Datasheet

2SC5859

2SC5859
2SC5859

2SC5859

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