Planar Transistor. 2SC4692 Datasheet

2SC4692 Transistor. Datasheet pdf. Equivalent

Part 2SC4692
Description Silicon NPN Triple Diffused Planar Transistor
Feature 2SC4692 Silicon NPN Triple Diffused Application EDTV/HDTV horizontal deflection output Features • .
Manufacture Hitachi
Datasheet
Download 2SC4692 Datasheet

2SC4692 Silicon NPN Triple Diffused Application EDTV/HDTV h 2SC4692 Datasheet
Recommendation Recommendation Datasheet 2SC4692 Datasheet




2SC4692
2SC4692
Silicon NPN Triple Diffused
Application
EDTV/HDTV horizontal deflection output
Features
High speed switching 0.5 µs Max
High breakdown voltage VCBO = 1500 V
Isolated package; TO-3PFM
Outline
TO-3PFM
1
2
3
1. Base
2. Collector
3. Emitter



2SC4692
2SC4692
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector surge current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
IC (surge)
PC*1
Tj
Tstg
Ratings
1500
800
5
12
20
50
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO
voltage
800
Emitter to base breakdown
voltage
V(BR)EBO
5
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
ICES
hFE
VCE (sat)
15
Base to emitter saturation
voltage
VBE (sat)
Fall time
tf
Typ
Max
Unit
V
Test conditions
IC = 10 mA, RBE = _
—V
IE = 10 mA, IC = 0
500 µA
35
5V
VCE = 1500 V, RBE = 0
VCE = 5 V, IC = 1 A
IC = 10 A, IB = 2 A
1.5 V
IC = 10 A, IB = 2 A
0.5 µs
ICP = 8 A, IB1 = 1.4 A,
IB2 = –2.5 A
2





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