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TC4421 TC4422 9A HIGH-SPEED MOSFET DRIVERS
FEATURES
s s s s Tough CMOS™ Construction High Peak Output Current .................................. 9A High Continuous Output Current ............... 2A Max Fast Rise and Fall Times: — 30 nsec with 4,700 pF Load — 180 nsec with 47,000 pF Load Short Internal Delays ............................ 30nsec Typ Low Output Impedance ............................ 1.4W Typ
GENERAL DESCRIPTION
The TC4421/4422 are high current buffer/drivers capable of driving large MOSFETs and IGBTs. They are essentially immune to any form of upset except direct overvoltage or over-dissipation — they cannot be latched under any conditions within their power and voltage ratings; they are not subject to damage or improper operation when up to 5V of ground bounce is present on their ground terminals; they can accept, without either damage or logic upset, more than 1A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4 kV of electrostatic discharge. The TC4421/4422 inputs may be driven directly from either TTL or CMOS (3V to 18V). In addition, 300 mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms.
2 3 4 5 6 7
s s
APPLICATIONS
s s s s s Line Drivers for Extra-Heavily-Loaded Lines Pulse Generators Driving the Largest MOSFETs and IGBTs Local Power ON/OFF Switch Motor and Solenoid Driver
PIN CONFIGURATIONS 5-Pin TO-220 8-Pin Plastic DIP/CerDIP
VDD 1 8 VDD 7 OUTPUT
ORDERING INFORMATION
Part No. TC4421CAT TC4421CPA TC4421EPA TC4421MJA TC4422CAT TC4422CPA TC4422EPA TC4422MJA Package 5-Pin TO-220 8-Pin PDIP 8-Pin PDIP 8-Pin CerDIP 5-Pin TO-220 8-Pin PDIP 8-Pin PDIP 8-Pin CerDIP Temperature Range 0°C to +70°C 0°C to +70°C – 40°C to +85°C – 55°C to+125°C 0°C to +70°C 0°C to +70°C – 40°C to +85°C – 55°C to+125°C
INPUT 2
TC4421 TC4422
Tab is Common to VDD
INPUT GND VDD GND OUTPUT
NC 3 GND 4
TC4421 TC4422
6 OUTPUT 5 GND
NOTE: Duplicate pins must both be connected for proper operation. NC = No connection
FUNCTIONAL BLOCK DIAGRAM
INVERTING
V DD
300 mV
OUTPUT
INPUT
4.7V
NONINVERTING
TC4421/TC4422 Inverting/Noninverting
GND EFFECTIVE INPUT C 25 pF
TC4421/2-7 -1018/96
8
4-231
TELCOM SEMICONDUCTOR, INC.
9A HIGH-SPEED MOSFET DRIVERS TC4421 TC4422
ABSOLUTE MAXIMUM RATINGS*
Power Dissipation, TA ≤ 70°C PDIP ..................................................................730W CerDIP ............................................................800mW 5-Pin TO-220 ......................................................1.6W Power Dissipation, TA ≤ 70°C 5-Pin TO-220 (With Heat Sink) .........................1.60W Derating Factors (To Ambient) PDIP ............................................................. 8mW/°C CerDIP ....................................................... 6.4mW/°C 5-Pin TO-220 .............................................. 12mW/°C Thermal Impedance (To Case) 5-Pin TO-220 RQJ-C ..................................................... 10°C/W Storage Temperature ............................ – 65°C to +150°C Operating Temperature (Chip) ................................ 150°C Operating Temperature (Ambient) C Version ............................................... 0°C to +70°C E Version .......................................... – 40°C to +85°C M Version ....................................... – 55°C to +125°C Lead Temperature (10 sec) ..................................... 300°C Supply Voltage ............................................................20V Input Voltage .......................... (VDD + 0.3V) to (GND - 5V) Input Current (VIN > VDD) ........................................ 50 mA
*Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS: TA = 25°C with 4.5V ≤ VDD ≤ 18V unless otherwise specified.
Symbol Input
VIH VIL IIN Logic 1 Input Voltage Logic 0 Input Voltage Input Current 2.4 — – 10 1.8 1.3 — — 0.8 10 V V µA
Parameter
Test Conditions
Min
Typ
Max
Unit
0V ≤ VIN ≤ VDD
Output
VOH VOL RO RO IPK IDC IREV High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Peak Output Current Continuous Output Current Latch-Up Protection See Figure 1 See Figure 1 VDD = 18V, IO = 10 mA VDD = 18V, IO = 10 mA VDD = 18V 10V ≤ VDD ≤ 18V, TC = 25° (TC4421/22 CAT only) Duty Cycle ≤ 2% Withstand Reverse Current VDD – 0.025 — — — — 2 >1500 t ≤ 300 µsec — — 1.4 0.9 9 — 0.025 — 1.7 — V V Ω Ω A .