N-CHANNEL MOSFET
STP16NK60Z - STB16NK60Z-S STW16NK60Z
N-CHANNEL 600V - 0.38Ω - 14A TO-220 / I2SPAK / TO-247 Zener-Protected SuperMESH™ MO...
Description
STP16NK60Z - STB16NK60Z-S STW16NK60Z
N-CHANNEL 600V - 0.38Ω - 14A TO-220 / I2SPAK / TO-247 Zener-Protected SuperMESH™ MOSFET
TYPE STP16NK60Z STB16NK60Z-S STW16NK60Z
s s s s s s
VDSS 600 V 600 V 600 V
RDS(on) < 0.42 Ω < 0.42 Ω < 0.42 Ω
ID 14 A 14 A 14 A
Pw 190 W 190 W 190 W
3 1 2
TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY
3 12
TO-220
I2SPAK
3 2 1
TO-247
DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES
ORDER CODE
PART NUMBER STP16NK60Z STB16NK60Z-S STW16NK60Z MARKING P16NK60Z B16NK60Z W16NK60Z PACKAGE TO-220 I2SPAK TO-247 PACKAGING TUBE TUBE TUBE
March 2004
1/11
STP16NK60Z - STB16NK60Z-S - STW16NK60Z
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) To...
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