MRF545 Datasheet - Microsemi Corporation





MRF545 Datasheet - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF545   MRF545  

Datasheet: MRF545 datasheet

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Description: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 1 8936-1013 PHONE: (215) 631-9840 FAX: (2 15) 631-9855 MRF545 RF & MICROWAVE DIS CRETE LOW POWER TRANSISTORS Features • • • Silicon PNP, high Freque ncy, high breakdown, To-39 packaged, Tr ansistor Maximum Unilateral Gain = 14 d B (typ) @ f = 200 MHz High Collector Ba se Breakdown Voltage - BVCBO = 100 V (m in) High FT - 1400 MHz 1. Emitter 2. Ba se 3. Collector TO-39 DESCRIPTION: De signed primarily for use in high freque ncy and medium and high resolution colo r video display monitors as well as oth er applications requiring high breakdow n characteristics. ABSOLUTE MAXIMUM RA TINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage C


Manufacture Part Number Description

Microsemi Corporation

MRF545

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS




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