DatasheetsPDF.com

MTP27N10E Dataheets PDF



Part Number MTP27N10E
Manufacturers Motorola
Logo Motorola
Description TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM
Datasheet MTP27N10E DatasheetMTP27N10E Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP27N10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP27N10E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies.

  MTP27N10E   MTP27N10E


SG1436 MTP27N10E 3R5000R


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)