SD1487

SD1487 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . . . 30 MHz 12.5 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION P OUT = 100 W MIN. WITH 12.0 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1487 BRANDING SD1487 PIN CONNECTION DESCRIPTION The SD1487 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes state-of-theart diffused emitter ballasting to achieve extreme ruggedness under severe operating conditions. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 36 18 4.0 20 290 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 0.6 °C/W 1/5 SD1487 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVCEO BVEBO ICES hFE DYNAMIC Symbol IC = 100mA IC = 100mA IC = 100mA IE = 20mA VCE = 15V VCE = 5V IE = 0mA VBE = 0V IB = 0mA IC = 0mA IE = 0mA IC = 5A 36 36 18 4.0 — 10 — — — — — — — — — — 20 200 V V V V mA — Test Conditions Value Min. Typ. Max. Unit POUT GP IMD3* COB *Note: f f = 30 MHz f = 30 MHz f = 1 MHz VCE = 12.5 V VCE = 12.5 V VCB = 12.5 V ICQ = 150mA ICQ = 150mA ICQ = 150mA 100 11 — — — 13 — 400 — — −30 — W dB dB...