MS2552

MS2552 RF PRODUCTS DIVISION RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES W W W. Microsemi . COM The MS2552 device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. This device is capable of withstanding an infinite load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semiautomatic bonding techniques ensure high reliability and product consistency. The MS2552 is housed in the industry-standard AMPAC metal/ceramic hermetic package with internal input/output matching structures. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Refractory/Gold Metallization Emitter Ballasted Ruggedized VSWR ∞ :1 Capability Input/Output Matching Overlay Geometry Metal/Ceramic Hermetic Package POUT = 325 W Min. GP = 6.7 dB Gain APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS Avionics Applications Symbol PDISS IC VCC TJ TSTG Parameter Power Dissipation* ( T C ≤ 100 ° C) Device Current* Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Value 880 24 55 250 -65 to +150 Unit W A V °C °C RTH(j-c) Junction-Case Thermal Resistance 0.17 °C/W Applies only to rated RF amplifier operation MS2552 Copyright  2000 MSC1665.PDF 2001-01-20 Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 1 MS255...