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IRLM220A Dataheets PDF



Part Number IRLM220A
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRLM220A DatasheetIRLM220A Datasheet (PDF)

Advanced Power MOSFET FEATURES ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = 200V ν Lower RDS(ON) : 0.609 Ω (Typ.) IRLM220A BVDSS = 200 V RDS(on) = 0.8 Ω ID = 1.13 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (.

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Advanced Power MOSFET FEATURES ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = 200V ν Lower RDS(ON) : 0.609 Ω (Typ.) IRLM220A BVDSS = 200 V RDS(on) = 0.8 Ω ID = 1.13 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25°C) Continuous Drain Current (TA=70°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C) * Linear Derating Factor * Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds (2) (1) (1) (3) (1) Value 200 1.13 0.9 9 ±20 29 1.13 0.2 5 2 0.016 - 55 to +150 °C 300 Units V A A V mJ A mJ V/ns W W/°C Thermal Resistance Symbol RθJA Characteristic Junction-to-Ambient * Typ. -Max. 62.5 Units °C/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. A N-CHANNEL POWER MOSFET IRLM220A Characteristic -- Units Min. Typ. Max. 200 -1.0 -----------------0.18 ------2.8 330 55 8 6 24 6 6 10.3 2.0 4.4 0.8 -430 70 30 25 20 60 20 15 --nC ns pF -2.0 100 -100 10 100 µA Ω S V V nA Test Condition VGS=0V,ID=250µA See Fig 7 VDS=5V,ID=250µA VGS=20V VGS=--20V VDS=200V VDS=160V,TC=125°C VGS=5V,ID=0.57A VDS=40V,ID=0.57A (4) (4) Electrical Characteristics (TC=25°C unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain (“Miller”) Charge V/°C ID=250µA VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=100V,ID=5A, RG=9Ω See Fig 13 VDS=160V,VGS=5V, ID=5A See Fig 6 & Fig 12 (4)(5) (4)(5) Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge (1) (4) Min. Typ. Max. Units --------140 0.59 1.13 9 1.5 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25°C,IS=1.13A,VGS=0V TJ=25°C,IF=5A diF/dt=100A/µs (4) Notes ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=35mH, IAS=1.13A, VDD=50V, RG=27Ω, Starting TJ =25°C ③ ISD ≤ 5A, di/dt ≤ 180A/µs, VDD ≤ BVDSS , Starting TJ =25°C ④ Pulse Test : Pulse Width = 250µs, Duty Cycle ≤ 2% ⑤ Essentially Independent of Operating Temperature N-CHANNEL POWER MOSFET Fig 1. Output Characteri.


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