IRLM210A

Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = 200V n Lower RDS(ON) : 1.185 Ω (Typ.) IRLM210A BVDSS = 200 V RDS(on) = 1.5 Ω ID = 0.77 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25 C) Continuous Drain Current (TA=70 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * Linear Derating Factor * o o Value 200 0.77 0.62 ① ② ① ① ③ 6.1 ±20 27 0.77 0.18 5.0 1.8 0.014 - 55 to +150 Units V A A V mJ A mJ V/ns W W/ C o Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8＂ from case for 5-seconds o C 300 Thermal Resistance Symbol RθJA Characteristic Junction-to-Ambient * Typ. -Max. 69.4 Units o C/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. A IRLM210A Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage ...