IRLM120A

Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = 100V n Lower RDS(ON) : 0.176 Ω (Typ.) IRLM120A BVDSS = 100 V RDS(on) = 0.22 Ω ID = 2.3 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=70 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) * Linear Derating Factor * Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds 300 - 55 to +150 o o o o Value 100 2.3 1.85 (1) Units V A A V mJ A mJ V/ns W W/ C o 18 ±20 105 2.3 0.27 6.5 2.7 0.022 (2) (1) (1) (3) C Thermal Resistance Symbol RθJA Characteristic Junction-to-Ambient * Typ. -Max. 46.3 Units o C/W * When mounted on the minimum pad size recommended (PCB Mount). 1 IRLM120A Electrical Characteristics (TC=25 oC unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage...