IRLMS6702

PD - 91414C IRLMS6702 HEXFET® Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low RDS(on) P-Channel MOSFET D 1 6 A D VDSS = -20V RDS(on) = 0.20Ω D 2 5 D Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. G 3 4 S Top View Micro6 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C V GS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max. -2.4 -1.9 -13 1.7 13 ± 12 5.0 -55 to + 150 Units A W mW/°C V V/ns °C Thermal Resistance Ratings RθJA Maximum Junction-to-Ambient „ Parameter Min. ––– Typ. ––– Max 75 Un...