HEXFET Power MOSFET
PD - 91540C
IRLMS1902
HEXFET® Power MOSFET
l l l l
Generation V Technology Micro6 Package Style Ultra Low RDS(on) N-Ch...
Description
PD - 91540C
IRLMS1902
HEXFET® Power MOSFET
l l l l
Generation V Technology Micro6 Package Style Ultra Low RDS(on) N-Channel MOSFET
D D G
1
6
A D D S
VDSS = 20V RDS(on) = 0.10Ω
2
5
3
4
Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
Top View
Micro6
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
3.2 2.6 18 1.7 13 ± 12 5.0 -55 to + 150
Units
A W
mW/°C
V V/ns °C
Thermal Resistance Ratings
Parameter
RθJA Maximum Junction-to-Ambient
Min.
Typ.
Max
75
Units
°C/W
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