Document
Advanced Power Electronics Corp.
AP03N70P
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
▼ Dynamic dv/dt Rating
D
▼ Repetitive Avalanche Rated
▼ Fast Switching ▼ Simple Drive Requirement
G S
Description
AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.TO-220 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness.
BVDSS 600/650/700V
RDS(ON)
3.6Ω
ID 3.3A
G D S
TO-220
The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DCAC converters and high current high speed switching circuits.
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TC=25℃
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V
ID@TC=100℃ IDM PD@TC=25℃
EAS IAR EAR TSTG TJ
Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
- /A/H
Rating 600/650/700
± 30 3.3 2.1 13.2 45 0.36 85 3.3 3.3
-55 to 150 -55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max. Max.
Value 2.8 62
Units V V A A A W
W/℃ mJ A mJ ℃ ℃
Unit ℃/W ℃/W
Data & specifications subject to change without notice
200303032
AP03N70P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON) VGS(th) gfs IDSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
/-
VGS=0V, ID=1mA
/A
VGS=0V, ID=1mA
/H
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance Gate Threshold Voltage
VGS=10V, ID=1.6A VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage Total Gate Charge3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time3 Rise Time Turn-off Delay Time
VDS=10V, ID=1.6A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS= ± 30V ID=3.3A VDS=480V VGS=10V VDD=300V ID=3.3A RG=10Ω,VGS=10V
Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RD=91Ω VGS=0V VDS=25V f=1.0MHz
600 - - V
650 - - V
700 - - V
- 0.6 - V/℃
- - 3.6 Ω
2 - 4V
-2-S - - 10 uA
- - 100 uA
- - ±100 nA - 11.4 - nC - 3.1 - nC - 4.2 - nC
- 8.4 - ns
-6- 17.7 -
ns ns
- 5.9 - ns
- 600 - 45 -4-
pF pF pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode ) ISM Pulsed Source Current ( Body Diode )1 VSD Forward On Voltage3
Test Conditions VD=VG=0V , VS=1.5V
Tj=25℃, IS=3.3A, VGS=0V
Min. Typ. Max. Units - - 3.3 A - - 13.2 A - - 1.5 V
Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=15mH , RG=25Ω , IAS=3.3A. 3.Pulse width <300us , duty cycle <2%.
Ordering Code
AP03N70P- X : X Denote BVDSS Grade Blank = BVDSS 600V A = BVDSS 650V H = BVDSS 700V
AP03N70P
ID , Drain Current (A)
4
T C =25 o C
3
V G =10V V G =6.0V
2
V G =5.0V
1
V G =4.5V
V G =4.0V
0 0
5 10 15 20 25
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
ID , Drain Current (A)
T C =150 o C
2 2
V G =10V V G =5.0V
V G =4.5V
1
V G =4.0V
1
V G =3.5V
0 0 5 10 15 20 25
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.2
1.1
1
0.9
0.8 -50
0 50 100
T j , Junction Temperature ( o C)
150
Fig 3. Normalized BVDSS v.s. Junction Temperature
Normalized RDS(ON)
3
I D =3.5A 2.5 V G =10V
2
1.5
1
0.5
0 -50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance v.s. Junction Temperature
Normalized BVDSS (V)
AP03N70P
ID , Drain Current (A)
3.5 3
2.5 2
1.5 1
0.5 0 25
50 75 100 125
T c , Case Temperature ( o C )
150
Fig 5. Maximum Drain Current v.s. Case Temperature
PD (W)
50
40
30
20
10
0 0 50 100 150
Tc , Case Temperature( o C)
Fig 6. Typical Power Dissipation
100
10
1
0
T c =25 o C Single Pulse
0 1 10
100
V DS (V)
10us
100us 1ms 10ms 100ms
1000
10000
Normalized Thermal Response (Rthjc)
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02 0.01
SINGLE PULSE
PDM
t
T
Duty factor = t/T Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
ID (A)
VGS , Gate to Source Voltage (V) C (pF)
AP03N70P
16
14 I D =3.3A V DS =480V
12
10
8
6
4
2
0 0 2 4 6 8 10 12 14 16
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
Ciss
100
Coss
Crss
1 1 5 9 13 17 21 25 29
V DS (V)
Fig 10. Typical Capacitance Characteristics
IS (A) VGS(th) (V)
100
10
T j = 150 o C
1
T j = 25 o C
0.1
0.01 0.1 0.3 0.5 0.