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03N70P Dataheets PDF



Part Number 03N70P
Manufacturers ADPOW
Logo ADPOW
Description AP03N70P
Datasheet 03N70P Datasheet03N70P Datasheet (PDF)

Advanced Power Electronics Corp. AP03N70P N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Dynamic dv/dt Rating D ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement G S Description AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.TO-220 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and .

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Advanced Power Electronics Corp. AP03N70P N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Dynamic dv/dt Rating D ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement G S Description AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.TO-220 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. BVDSS 600/650/700V RDS(ON) 3.6Ω ID 3.3A G D S TO-220 The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DCAC converters and high current high speed switching circuits. Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range - /A/H Rating 600/650/700 ± 30 3.3 2.1 13.2 45 0.36 85 3.3 3.3 -55 to 150 -55 to 150 Thermal Data Symbol Parameter Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Max. Max. Value 2.8 62 Units V V A A A W W/℃ mJ A mJ ℃ ℃ Unit ℃/W ℃/W Data & specifications subject to change without notice 200303032 AP03N70P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage VGS=0V, ID=1mA /- VGS=0V, ID=1mA /A VGS=0V, ID=1mA /H Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance Gate Threshold Voltage VGS=10V, ID=1.6A VDS=VGS, ID=250uA Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150oC) Gate-Source Leakage Total Gate Charge3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time3 Rise Time Turn-off Delay Time VDS=10V, ID=1.6A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS= ± 30V ID=3.3A VDS=480V VGS=10V VDD=300V ID=3.3A RG=10Ω,VGS=10V Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RD=91Ω VGS=0V VDS=25V f=1.0MHz 600 - - V 650 - - V 700 - - V - 0.6 - V/℃ - - 3.6 Ω 2 - 4V -2-S - - 10 uA - - 100 uA - - ±100 nA - 11.4 - nC - 3.1 - nC - 4.2 - nC - 8.4 - ns -6- 17.7 - ns ns - 5.9 - ns - 600 - 45 -4- pF pF pF Source-Drain Diode Symbol Parameter IS Continuous Source Current ( Body Diode ) ISM Pulsed Source Current ( Body Diode )1 VSD Forward On Voltage3 Test Conditions VD=VG=0V , VS=1.5V Tj=25℃, IS=3.3A, VGS=0V Min. Typ. Max. Units - - 3.3 A - - 13.2 A - - 1.5 V Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=15mH , RG=25Ω , IAS=3.3A. 3.Pulse width <300us , duty cycle <2%. Ordering Code AP03N70P- X : X Denote BVDSS Grade Blank = BVDSS 600V A = BVDSS 650V H = BVDSS 700V AP03N70P ID , Drain Current (A) 4 T C =25 o C 3 V G =10V V G =6.0V 2 V G =5.0V 1 V G =4.5V V G =4.0V 0 0 5 10 15 20 25 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics ID , Drain Current (A) T C =150 o C 2 2 V G =10V V G =5.0V V G =4.5V 1 V G =4.0V 1 V G =3.5V 0 0 5 10 15 20 25 V DS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 1.2 1.1 1 0.9 0.8 -50 0 50 100 T j , Junction Temperature ( o C) 150 Fig 3. Normalized BVDSS v.s. Junction Temperature Normalized RDS(ON) 3 I D =3.5A 2.5 V G =10V 2 1.5 1 0.5 0 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature Normalized BVDSS (V) AP03N70P ID , Drain Current (A) 3.5 3 2.5 2 1.5 1 0.5 0 25 50 75 100 125 T c , Case Temperature ( o C ) 150 Fig 5. Maximum Drain Current v.s. Case Temperature PD (W) 50 40 30 20 10 0 0 50 100 150 Tc , Case Temperature( o C) Fig 6. Typical Power Dissipation 100 10 1 0 T c =25 o C Single Pulse 0 1 10 100 V DS (V) 10us 100us 1ms 10ms 100ms 1000 10000 Normalized Thermal Response (Rthjc) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE PDM t T Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance ID (A) VGS , Gate to Source Voltage (V) C (pF) AP03N70P 16 14 I D =3.3A V DS =480V 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 Q G , Total Gate Charge (nC) Fig 9. Gate Charge Characteristics f=1.0MHz 10000 Ciss 100 Coss Crss 1 1 5 9 13 17 21 25 29 V DS (V) Fig 10. Typical Capacitance Characteristics IS (A) VGS(th) (V) 100 10 T j = 150 o C 1 T j = 25 o C 0.1 0.01 0.1 0.3 0.5 0.


AP03N70P 03N70P HD6433935


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