STS3DPFS45

P-CHANNEL 45V - 0.080 Ω - 3A SO-8 STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS MOSFET SCHOTTKY VDSS 45 V IF(AV) 3A RDS(on) < 0.11 Ω VRRM 45 V ID 3A VF(MAX) 0.51 V STS3DPFS45 DESCRIPTION This product associates the latest low voltage StripFETœ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones. SO-8 INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Ptot Parameter Dain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Value 45 45 ± 16 3 1.9 12 2 Unit V V V A A A W SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM dv/dt Parameter Repetitive Peak Reverse Voltage RMS Forward Curren Average Forward Current Surge Non Repetitive Forward Current Repetitive Peak Reverse Current Non Repetitive Peak Reverse Current Critical Rate Of Rise Of Reverse Voltage TL=125 oC δ =0.5 tp= 10 ms Sinusoidal tp=2 µs F=1 kHz tp=100 µs Value 45 20 3 75 1 1 10000 Unit V A A A A A V/µs () Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed February 2002 . 1/8 STS3DPFS45 TERMAL DATA Rthj-amb Rthj-amb Tstg Tj Thermal Re...