STS3DPFS30L

® STS3DPFS30L ™ STripFET MOSFET V DSS 30V SCHOTTKY IF(AV) 3A P - CHANNEL 30V - 0.13Ω - 3A S0-8 MOSFET PLUS SCHOTTKY RECTIFIER PRELIMINARY DATA R DS(on) <0.16 Ω V RRM 30V ID 3A V F(MAX) 0.51V MAIN PRODUCT CHARACTERISTICS DESCRIPTION: This product associates the latest low voltage StripFET ™ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones. SO-8 INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS ID ID IDM ( ) P tot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C o o Value 30 30 ± 20 3 1.9 12 2 Unit V V V A A A W SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symbol V RRM I F(RMS) I F(AV) I FSM I RSM dv/dt Parameter Repetitive Peak Reverse Voltage RMS Forward Current Average Forward Current Surge Non Repetitive Forward Current Non Repetitive Peak Reverse Current Critical Rate Of Rise Of Reverse Voltage T L =125 o C δ =0.5 tp= 10 ms Sinusoidal tp=100 µ s Value 30 20 3 75 1 10000 Unit V A A A A V/ µ s () Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed May 2000 1/5 STS3DPFS30L THERMAL DATA R thj-amb R thj-amb T stg Tj (*)Thermal...