DUAL P-CHANNEL 20V - 0.090 Ω - 3A SO-8 STripFET™ POWER MOSFET
TYPE STS3DPF20L
s s s
STS3DPF20V
VDSS 20 V
RDS(on) <0.1...
DUAL P-CHANNEL 20V - 0.090 Ω - 3A SO-8 STripFET™ POWER MOSFET
TYPE STS3DPF20L
s s s
STS3DPF20V
VDSS 20 V
RDS(on) <0.11 Ω
ID 3A
s
TYPICAL RDS(on) = 0.090 Ω @ 4.5 V TYPICAL RDS(on) = 0.1 Ω @ 2.7 V STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY ULTRA LOW THRESHOLD GATE DRIVE (2.7 V) SO-8
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting
transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s MOBILE PHONE APPLICATIONS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID IDM() Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Single Operation Drain Current (continuous) at TC = 100°C Single Operation Drain Current (pulsed) Total Dissipation at TC = 25°C Dual Operation Total Dissipation at TC = 25°C Single Operation Value 20 20 ± 12 3 1.9 12 1.6 2 Unit V V V A A A W W
() Pulse width limited by safe operating area. June 2002
.
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
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STS3DPF20V
THERMAL DATA
Rthj-amb Tj Tstg (*)Thermal Resistance Junction-ambient Thermal Operating Junction-ambient Storage Temperature Single Operation ...