STS3C3F30L

STS3C3F30L N-CHANNEL 30V - 0.050 Ω - 3.5A SO-8 P-CHANNEL 30V - 0.140 Ω - 3A SO-8 STripFET™ II POWER MOSFET TYPE STS3C3F30L(N-Channel) STS3C3F30L(P-Channel) s s s VDSS 30 V 30 V RDS(on) < 65 mΩ < 165 mΩ ID 3.5 A 3A s TYPICAL RDS(on) (N-Channel) = 50 mΩ TYPICAL RDS(on) (P-Channel) = 140 mΩ STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE SO-8 DESCRIPTION This application specific Power MOSFET is the second generation of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s DC/DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN CELLULAR PHONES ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Ptot Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Single Operating Drain Current (continuos) at TC = 100°C Single Operating Drain Current (pulsed) Total Dissipation at TC = 25°C Dual Operating Total Dissipation at TC = 25°C Single Operating Storage Temperature Max. Operating Junction Temperature 3.5 2.2 14 1.6 2 -60 to 150 150 N-CHANNEL 30 30 ± 16 2.7 1.7 11 P-CHANNEL Unit V V V A A A W W °C °C () Pulse width limited by safe operating area. February 2002 . Note: ...