MBR1100

MBR1100 Axial Lead Rectifier These rectifiers employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features Low Reverse Current Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Guard−Ring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature High Surge Capacity These Devices are Pb−Free and are RoHS Compliant Mechanical Characteristics: Case: Epoxy, Molded Weight: 0.4 Gram (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Cathode Indicated by Polarity Band MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (VR(equiv) ≤ 0.2 VR (dc), RqJA = 50°C/W, P.C. Board Mounting, [see Note 3], TA = 120°C) Peak Repetitive Forward Current (VR(equiv) ≤ 0.2 VR (dc), RqJA = 50°C/W, P.C. Board Mounting, [see Note 3], TA = 110°C) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Symbol VRRM VRWM VR IO IFRM IFSM Value 100 1.0 2.0 50 ...