SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
KRA560E~KRA564E
E...
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
KRA560E~KRA564E
EPITAXIAL PLANAR
PNP TRANSISTOR
B
FEATURES
With Built-in Bias Resistors. Reduce a Quantity of Parts and Manufacturing Process. High Packing Density.
A1 A C
B1
Simplify Circuit Design.
1
5
DIM A
A1 B
2
3
EQUIVALENT CIRCUIT
C B R1
EQUIVALENT CIRCUIT (TOP VIEW)
5 4
P P
4
B1 C D H J P
MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2+
0.50 _ 0.05 0.2 + _ 0.05 0.5 +
C
D
_ 0.05 0.12 + 5
Q1
Q2
H
E
1
2
3
1. Q 1 IN (BASE) 2. Q 1, Q 2 COMMON (EMITTER) 3. Q 2 IN (BASE) 4. Q 2 OUT (COLLECTOR) 5. Q 1 OUT (COLLECTOR)
TESV
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
)
SYMBOL VCBO VCEO VEBO IC RATING -50 -50 -5 -100 UNIT V V V mA CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage TemperatureRange * Total Rating. SYMBOL PC * Tj Tstg RATING 200 150 -55 150 UNIT mW
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency KRA560E KRA561E Input Resistor KRA562E KRA563E KRA564E Note : * Characteristic of
Transistor Only.
)
SYMBOL ICBO IEBO hFE VCE(sat) fT * TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-10mA, IB=-0.5mA VCE=-10V, IC=-5mA MIN. 120 R1 TYP. -0.1 250 4.7 10 100 22 47 MAX. -100 -100 -0.3 k V MHz U...
