Document
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
KRA560E~KRA564E
EPITAXIAL PLANAR PNP TRANSISTOR
B
FEATURES
With Built-in Bias Resistors. Reduce a Quantity of Parts and Manufacturing Process. High Packing Density.
A1 A C
B1
Simplify Circuit Design.
1
5
DIM A
A1 B
2
3
EQUIVALENT CIRCUIT
C B R1
EQUIVALENT CIRCUIT (TOP VIEW)
5 4
P P
4
B1 C D H J P
MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2+
0.50 _ 0.05 0.2 + _ 0.05 0.5 +
C
D
_ 0.05 0.12 + 5
Q1
Q2
H
E
1
2
3
1. Q 1 IN (BASE) 2. Q 1, Q 2 COMMON (EMITTER) 3. Q 2 IN (BASE) 4. Q 2 OUT (COLLECTOR) 5. Q 1 OUT (COLLECTOR)
TESV
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
)
SYMBOL VCBO VCEO VEBO IC RATING -50 -50 -5 -100 UNIT V V V mA CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage TemperatureRange * Total Rating. SYMBOL PC * Tj Tstg RATING 200 150 -55 150 UNIT mW
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency KRA560E KRA561E Input Resistor KRA562E KRA563E KRA564E Note : * Characteristic of Transistor Only.
)
SYMBOL ICBO IEBO hFE VCE(sat) fT * TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-10mA, IB=-0.5mA VCE=-10V, IC=-5mA MIN. 120 R1 TYP. -0.1 250 4.7 10 100 22 47 MAX. -100 -100 -0.3 k V MHz UNIT nA nA
Marking
5 4
Type Name
MARK SPEC
TYPE MARK KRA560E PK KRA561E PM KRA562E PN KRA563E PO KRA564E PP
1
2
3
2002. 7. 9
Revision No : 2
J
1/4
KRA560E~KRA564E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC KRA560E KRA561E Rise Time KRA562E KRA563E KRA564E KRA560E KRA561E Switching Time Storage Time KRA562E KRA563E KRA564E KRA560E KRA561E Fall Time KRA562E KRA563E KRA564E tf tstg VO=-5V VIN=-5V RL=1k tr SYMBOL TEST CONDITION MIN. TYP. 0.2 0.065 0.4 0.1 0.15 2.0 1.7 3.0 2.0 1.5 0.3 0.3 1.7 0.8 1.5 MAX. S UNIT
2002. 7. 9
Revision No : 2
2/4
KRA560E~KRA564E
h FE - I C
COLLECTOR-EMITTER SATURATIN VOLTAGE V CE(sat) (V) -2 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.1
Ta=100 C Ta=25 C Ta=-25 C
2k DC CURRENT GAIN h FE 1k 500 300 100 50 30
KRA560E
KRA560E
I C /IB =20
VCE(sat) - I C
Ta=100 C Ta=25 C Ta=-25 C
VCE =-5V
10 -0.1
-0.3
-1
-3
-10
-30
-100
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
COLLECTOR-EMITTER SATURATIN VOLTAGE V CE(sat) (V)
2k DC CURRENT GAIN h FE 1k 500 300 100 50 30
KRA561E
h FE - I C
-2 -1 -0.5 -0.3 -0.1 -0.05 -0.03
KRA561E
I C /I B =20
VCE(sat) - I C
Ta=100 C Ta=25 C Ta=-25 C
Ta=100 C Ta=25 C Ta=-25 C
VCE =-5V
10 -0.1
-0.3
-1
-3
-10
-30
-100
-0.01 -0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
COLLECTOR-EMITTER SATURATIN VOLTAGE V CE(sat) (V)
2k DC CURRENT GAIN h FE 1k 500 300 100 50 30
KRA562E
h FE - I C
-2 -1 -0.5 -0.3 -0.1 -0.05 -0.03
KRA562E
IC /I B =20
VCE(sat) - I C
Ta=100 C Ta=25 C Ta=-25 C
Ta=100 C Ta=25 C Ta=-25 C
VCE =-5V
10 -0.1
-0.3
-1
-3
-10
-30
-100
-0.01 -0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
2002. 7. 9
Revision No : 2
3/4
KRA560E~KRA564E
h FE - I C
COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) -2 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.1
2k DC CURRENT GAIN h FE 1k 500 300 100 50 30
KRA563E
KRA563E
I C /I B =20
VCE(sat) - I C
Ta=100 C Ta=25 C Ta=-25 C
Ta=100 C Ta=25 C Ta=-25 C
VCE =-5V
10 -0.1
-0.3
-1
-3
-10
-30
-100
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V)
2k DC CURRENT GAIN h FE 1k 500 300 100 50 30
KRA564E
h FE - I C
-2 -1 -0.5 -0.3 -0.1 -0.05 -0.03
KRA564E
I C /I B =20
VCE(sat) - I C
Ta=100 C Ta=25 C Ta=-25 C
Ta=100 C Ta=25 C Ta=-25 C
10 -0.1
VCE =-5V
-0.3
-1
-3
-10
-30
-100
-0.01 -0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
2002. 7. 9
Revision No : 2
4/4
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