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KRA737E

Korea Electronics

(KRA736E - KRA742E) EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES With Built...


Korea Electronics

KRA737E

File Download Download KRA737E Datasheet


Description
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES With Built-in Bias Resistors. Reduce a Quantity of Parts and Manufacturing Process. A1 KRA736E~KRA742E EPITAXIAL PLANAR PNP TRANSISTOR B B1 Simplify Circuit Design. A C 1 6 5 2 3 4 EQUIVALENT CIRCUIT OUT R1 R2 BIAS RESISTOR VALUES TYPE NO. KRA736E R1(k 1 2.2 2.2 4.7 10 47 100 ) R2(k 10 2.2 10 10 4.7 10 100 1. 2. 3. 4. 5. 6. P P DIM A A1 B B1 C D H J P MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2 + 0.50 _ 0.05 0.2 + _ 0.05 0.5 + _ 0.05 0.12 + 5 C ) H J IN KRA737E KRA738E KRA739E COMMON(+) KRA740E KRA741E KRA742E Q1 Q2 Q2 Q2 Q1 Q1 COMMON (EMITTER) COMMON (EMITTER) IN (BASE) OUT (COLLECTOR) IN (BASE) OUT (COLLECTOR) TES6 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 Q1 D Q2 MAXIMUM RATING (Ta=25 Output Voltage ) SYMBOL KRA736E 742E KRA736E KRA737E KRA738E VO 1 2 3 CHARACTERISTIC RATING -50 -10, 5 -12, 10 -12, 5 UNIT V Input Voltage KRA739E KRA740E KRA741E KRA742E VI -20, 7 -30, 10 -40, 15 -40, 10 V Output Current Power Dissipation Junction Temperature Storage Temperature Range * : Total Rating. KRA736E 742E IO PD * Tj Tstg -100 200 150 -55 150 mA mW Marking 6 5 4 Type Name MARK SPEC TYPE MARK KRA736E KRA737E KRA738E KRA739E KRA740E KRA741E KRA742E J2 J4 J5 J6 J7 J8 J9 1 2 3 2002. 7. 9 Revision No : 2 1/6 KRA736E~KRA742E ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Output Cut-off Current KRA736E 742E SYMBOL I...




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