BLA1011-10

DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLA1011-10 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor FEATURES High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators, reducing common mode inductance. APPLICATIONS Avionics transmitter applications in the 1030 to 1090 MHz frequency range. DESCRIPTION 2 1 BLA1011-10 PINNING - SOT467C PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 3 Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the flange. Top view MBK584 Fig.1 Simplified outline (SOT467C). QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION Pulsed class-AB; tp = 50 µs; δ = 2 % ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BLA1011-10 − DESCRIPTION flanged LDMOST ceramic package; 2 mounting holes; 2 leads VERSION SOT467C f (MHz) 1030 to 1090 VDS (V) 36 PL (W) 10 Gp (dB) >15 ηD (%) >40 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) total power dissipation storage temperature junction temperature Th ≤ 25 °C CONDITIONS − − − − −65 − MIN. MAX. 75 ±15 2.2 25 +150 200 V V A W °C °C UNIT 2003 Nov...