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Transistor
2SC1573, 2SC1573A, 2SC1573B
Silicon NPN triple diffusion planer type
For high breakdown...
www.DataSheet4U.com
Transistor
2SC1573, 2SC1573A, 2SC1573B
Silicon
NPN triple diffusion planer type
For high breakdown voltage general amplification For small TV video output Complementary to 2SC1573 and 2SA879
Unit: mm
5.9± 0.2 4.9± 0.2
q q
High collector to emitter voltage VCEO. High transition frequency fT.
+0.3 +0.2
Parameter Collector to base voltage 2SC1573 2SC1573A 2SC1573B 2SC1573 Collector to emitter voltage 2SC1573A 2SC1573B
Symbol
Ratings 250
Unit
2.54± 0.15 13.5± 0.5
VCBO
300 400 200
V
0.7–0.2
s Absolute Maximum Ratings
(Ta=25˚C)
0.7± 0.1
8.6± 0.2
s Features
VCEO VEBO ICP IC PC Tj Tstg
300 400
V
0.45–0.1 1.27 1.27
0.45–0.1
+0.2
Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
100 70 1 150 –55 ~ +150
mA mA W ˚C ˚C
s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter voltage 2SC1573 2SC1573A 2SC1573B 2SC1573 2SC1573A 2SC1573B
(Ta=25˚C)
Symbol ICBO VCEO Conditions VCB = 12V, IE = 0 200 IC = 100µA, IB = 0 300 400 5 VEBO hFE* VCE(sat) fT IE = 1µA, IC = 0 VCE = 10V, IC = 5mA IC = 50mA, IB = 5mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 50 80 5 Cob 4 10 8 pF 7 30 220 1.2 V MHz V V min typ max 2 Unit µA
Emitter to base voltage
Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
*h
2SC1573 2SC1573A 2SC1573B
FE
Rank classification
P 30 ~ 100 Q 60 ~ 150 R 100 ~ 2...