C1573B

www.DataSheet4U.com Transistor 2SC1573, 2SC1573A, 2SC1573B Silicon NPN triple diffusion planer type For high breakdown voltage general amplification For small TV video output Complementary to 2SC1573 and 2SA879 Unit: mm 5.9± 0.2 4.9± 0.2 q q High collector to emitter voltage VCEO. High transition frequency fT. +0.3 +0.2 Parameter Collector to base voltage 2SC1573 2SC1573A 2SC1573B 2SC1573 Collector to emitter voltage 2SC1573A 2SC1573B Symbol Ratings 250 Unit 2.54± 0.15 13.5± 0.5 VCBO 300 400 200 V 0.7–0.2 s Absolute Maximum Ratings (Ta=25˚C) 0.7± 0.1 8.6± 0.2 s Features VCEO VEBO ICP IC PC Tj Tstg 300 400 V 0.45–0.1 1.27 1.27 0.45–0.1 +0.2 Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 100 70 1 150 –55 ~ +150 mA mA W ˚C ˚C s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage 2SC1573 2SC1573A 2SC1573B 2SC1573 2SC1573A 2SC1573B (Ta=25˚C) Symbol ICBO VCEO Conditions VCB = 12V, IE = 0 200 IC = 100µA, IB = 0 300 400 5 VEBO hFE* VCE(sat) fT IE = 1µA, IC = 0 VCE = 10V, IC = 5mA IC = 50mA, IB = 5mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 50 80 5 Cob 4 10 8 pF 7 30 220 1.2 V MHz V V min typ max 2 Unit µA Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance *h 2SC1573 2SC1573A 2SC1573B FE Rank classification P 30 ~ 100 Q 60 ~ 150 R 100 ~ 2...