Silicon MOS type integrated circuit
(IPD)
MIP2C10MP
MOS
■
• : 80% • • )
8
Unit : mm
(100 VAC
: 20 mW,
9.4±0.3
7
5
7.62±0.25 3.4±0.3 3.8±0.25 6.3±0.2
...
Description
(IPD)
MIP2C10MP
MOS
■
: 80% )
8
Unit : mm
(100 VAC
: 20 mW,
9.4±0.3
7
5
7.62±0.25 3.4±0.3 3.8±0.25 6.3±0.2
(
− 12
)
■
AC ( )
1 2 3 4
2.54±0.25
0.5±0.1
VD VCC VDD CL VCC VDD VFB VCL ID Tch Tstg
700 45 8 8 8 350 150 −55 ∼ +150
V V V V V mA °C °C
1.2±0.25
(2,3,7PIN)
1 : VDD 2 : FB 3 : CL (1,4,5,8PIN) 4 : VCC 5 : Drain 7 : Source 8 : Source DIP8-A1(CF) Package
0.4±0.1 0.6±0.1
: MIP2C1
■
TC = 25°C ± 3°C
fOSC fOSC(L) MAXDC
VCC = 15 V, VD = 5 V, FB: Open, ICL = 50 µA VCC = 15 V, VD = 5 V, FB: Open, ICL < ICL1 VCC = 15 V, VD = 5 V, FB: Open, ICL = 50 µA VCC = 15 V, VD = 5 V, FB: Open, ICL = 50 µA VD = 5 V, FB: Open, ICL = 50 µA VD = 5 V, FB: Open, ICL = 50 µA On → Off VCC = 15 V, VD = 5 V, ICL = 50 µA VCC = 15 V, VD = 5 V, ICL = 50 µA
90
0.6+0.25 -0.01
■
100
110
kHz
15
20
25
kHz
45.0
47.5
50.0
VDD VDD VCC
VDD VUV VCC(ON) IFB1 IFBHYS
5.2
5.7
6.2
4.5 8.0 90
5.0 9.0 120
5.5 10.0 150
µA µA
2.0
3˚ to 15˚
+0 0.25 -0.05
.10
%
V
V V
: 2003
8
SLB00049AJD
1
MIP2C10MP
■ TC = 25°C ± 3°C ( )
VFB
VCC = 15 V, VD = 5 V, IFB = 50 µA ICL = 50 µA VCC = 15 V, VD = 5 V, FB: Open, ICL = 50 µA VDD = 0 V, VD = 40 V, FB: Open, CL: Open VDD = 4 V, VD = 40 V, FB: Open, CL: Open VCC = 15 V, VD = 5 V, FB: Open, ICL = 10 µA fOSC → fOSC(L) VCC = 15 V, VD = 5 V, FB: Open VCC = 15 V, VD = 5 V, FB: Open VCC = 15 V, FB: Open, ICL > 35 µA VCC = 15 V, FB: Open, ICL < 5 µA ICL > 35 µA VDD = 5 V, FB: Open, ICL = 50 µA
0.7
1.0
1.3
V
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