SD1070

SD1070 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES W W W . Microsemi . COM This silicon epitaxial NPN planar high frequency transistor employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resistance and low output capacitance. These transistors are intended for Class A, B, or C amplifier, oscillator or frequency multiplier circuits and are specifically designed for operation in the VHF-UHF region. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ! ! ! ! ! ! 130 - 400 MHz 28 Volts High Power Gain High Efficiency Common Emitter POUT = 13.5 W Min. @ 175 MHz APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS ! VHF - UHF Applications ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol VCBO VCES VEBO IC PDISS TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 65 40 4.0 3.0 23.0 +200 -65 to +150 Unit V V V A W °C °C PIN CONNECTION THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 7.6 °C/W 1 2 3 SD1070 1. Emitter 2. Base 3. Collector Copyright  2000 MSC1642.PDF 2000-12-20 Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 1 SD1070 RF & M...