2SC3358

UNISONIC TECHNOLOGIES CO., LTD 2SC3358 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER 3 24  FEATURES *Low Noise and High Gain *High Power Gain 1 TO-50  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SC3358L-T50-R 2SC3358G-T50-R TO-50 Note: Pin Assignment: C: Collector E: Emitter B: Base Pin Assignment 1234 CEBE Packing Tape Reel 2SC3358G-T50-R (1)Packing Type (2)Package Type (3)Green Package (1) R: Tape Reel (2) T50: TO-50 (3) G: Halogen Free and Lead Free, L: Lead Free www.unisonic.com.tw Copyright © 2020 Unisonic Technologies Co., Ltd 1 of 3 QW-R212-001.C 2SC3358 NPN SILICON EPITAXIAL TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise stated) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 3 V Collector Current IC 100 mA Total Device Dissipation Junction Temperature Storage Temperature PD TJ TSTG 250 150 -65 ~ +150 mW °С °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS PARAMETER Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain (Note) Transition Frequency Feed-Back Capacitance Noise figure SYMBOL ICBO IEBO hFE fT Cre NF TEST CONDITIONS VCB=10V, IE=0 VEB=1V, IC=0 VCE=10V, IC=20mA VCE=10V, IC=20mA VC...