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2SC2958 Dataheets PDF



Part Number 2SC2958
Manufacturers NEC
Logo NEC
Description NPN SILICON EPITAXIAL TRANSISTOR
Datasheet 2SC2958 Datasheet2SC2958 Datasheet (PDF)

DATA SHEET SILICON TRANSISTORS 2SC2958, 2959 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES • Ideal for use of high voltage current such as TV vertical deflection (drive and output), audio output, pin cushion correction • Complementary transistor with 2SA1221 and 2SA1222 VCEO = 140 V: 2SA1221/2SC2958 VCEO = 160 V: 2SA1222/2SC2959 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to.

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DATA SHEET SILICON TRANSISTORS 2SC2958, 2959 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES • Ideal for use of high voltage current such as TV vertical deflection (drive and output), audio output, pin cushion correction • Complementary transistor with 2SA1221 and 2SA1222 VCEO = 140 V: 2SA1221/2SC2958 VCEO = 160 V: 2SA1222/2SC2959 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current (DC) IC(DC) Collector current (pulse) IC(pulse)* Total power dissipation PT Junction temperature Tj Storage temperature Tstg * PW ≤ 10 ms, duty cycle ≤ 50% Ratings 160 140/160 5.0 500 1.0 1.0 150 −55 to +150 Unit V V V mA A W °C °C ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Symbol Conditions Collector cutoff current ICBO VCB = 100 V, IE = 0 Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 DC current gain hFE ** VCE = 2.0 V, IC = 100 mA DC base voltage VBE ** VCE = 5.0 V, IC = 20 mA Collector saturation voltage VCE(sat) ** IC = 1.0 A, IB = 0.2 A Base saturation voltage VBE(sat) ** IC = 1.0 A, IB = 0.2 A Output capacitance Cob VCB = 10 V, IE = 0, f = 1.0 MHz Gain bandwidth product fT VCE = 10 V, IE = −20 mA ** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed PACKAGE DRAWING (UNIT: mm) MIN. 100 0.6 30 TYP. 150 0.64 0.32 1.1 13 60 MAX. 200 200 400 0.7 0.7 1.3 30 Unit nA nA V V V pF MHz The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16150EJ1V0DS00 Date Published April 2002 N CP(K) Printed in Japan © 21090928 hFE CLASSIFICATION Marking hFE M 100 to 200 L 160 to 320 K 200 to 400 TYPICAL CHARACTERISTICS (Ta = 25°C) 2SC2958, 2959 2 Data Sheet D16150EJ1V0DS 2SC2958, 2959 Data Sheet D16150EJ1V0DS 3 2SC2958, 2959 • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not spe.


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