Document
DATA SHEET
SILICON TRANSISTORS
2SC2958, 2959
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS
FEATURES • Ideal for use of high voltage current such as TV vertical
deflection (drive and output), audio output, pin cushion correction • Complementary transistor with 2SA1221 and 2SA1222 VCEO = 140 V: 2SA1221/2SC2958 VCEO = 160 V: 2SA1222/2SC2959
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)*
Total power dissipation
PT
Junction temperature
Tj
Storage temperature
Tstg
* PW ≤ 10 ms, duty cycle ≤ 50%
Ratings 160
140/160 5.0 500 1.0 1.0 150
−55 to +150
Unit V V V mA A W °C °C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO VCB = 100 V, IE = 0
Emitter cutoff current
IEBO VEB = 5.0 V, IC = 0
DC current gain
hFE ** VCE = 2.0 V, IC = 100 mA
DC base voltage
VBE ** VCE = 5.0 V, IC = 20 mA
Collector saturation voltage VCE(sat) ** IC = 1.0 A, IB = 0.2 A
Base saturation voltage
VBE(sat) ** IC = 1.0 A, IB = 0.2 A
Output capacitance
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
Gain bandwidth product
fT VCE = 10 V, IE = −20 mA
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed
PACKAGE DRAWING (UNIT: mm)
MIN. 100 0.6
30
TYP.
150 0.64 0.32 1.1 13 60
MAX. 200 200 400 0.7 0.7 1.3 30
Unit nA nA
V V V pF MHz
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D16150EJ1V0DS00 Date Published April 2002 N CP(K) Printed in Japan
©
21090928
hFE CLASSIFICATION
Marking hFE
M 100 to 200
L 160 to 320
K 200 to 400
TYPICAL CHARACTERISTICS (Ta = 25°C)
2SC2958, 2959
2 Data Sheet D16150EJ1V0DS
2SC2958, 2959
Data Sheet D16150EJ1V0DS
3
2SC2958, 2959
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