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KMM53616000CK

Samsung Semiconductor

DRAM MODULE

DRAM MODULE KMM53616000CK/CKG 4Byte 16Mx36 SIMM (16Mx4 & 16Mx1 base) Revision 0.0 June 1999 DRAM MODULE Revision His...


Samsung Semiconductor

KMM53616000CK

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Description
DRAM MODULE KMM53616000CK/CKG 4Byte 16Mx36 SIMM (16Mx4 & 16Mx1 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) The 4th. generation of 64Mb DRAM components are applied for this module. KMM53616000CK/CKG DRAM MODULE KMM53616000CK/CKG KMM53616000CK/CKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53616000C is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616000C consists of eight CMOS 16Mx4bits DRAMs and four CMOS 16Mx1bit DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM53616000C is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets. FEATURES Part Identification - KMM53616000CK(4K cycles/64ms Ref, SOJ, Solder) - KMM53616000CKG(4K cycles/64ms Ref, SOJ, Gold) Fast Page Mode Operation CAS-before-RAS & Hidden Refresh capability RAS-only refresh capability TTL compatible inputs and outputs Single +5V±10% power supply JEDEC standard PDpin & pinout PCB : Height(1250mil), double sided component PERFORMANCE RANGE Speed -5 -6 tRAC 50ns 60ns tCAC 13ns 15ns tRC 90ns 110ns tPC 35ns 40ns PIN CONFIGURATIONS Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol VSS DQ0 DQ18 DQ1 DQ19 DQ2 DQ20 DQ3 DQ21 Vcc NC A0 A1...




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