KMM5321204C2W

DRAM MODULE KMM5321204C2W/C2WG 1Mx32 DRAM SIMM (1MX16 Base) Revision 0.0 November 1997 -1- Rev. 0.0 (Nov. 1997) DRAM MODULE Revision History Version 0.0 (November 1997) Changed module PCB from 6-Layer to 4-Layer. KMM5321204C2W/C2WG Changed Module Part No. from KMM5321200CW/CWG to KMM5321200C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321204C2W/C2WG KMM5321204C2W/C2WG Fast Page Mode with Extended Data Out 1M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM5321204C2W is a 1Mx32bits Dynamic RAM high density memory module. The Samsung KMM5321204C2W consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ package mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5321204C2W is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets. FEATURES Part Identification - KMM5321204C2W(1024 cycles/16ms Ref, SOJ, Solder) - KMM5321204C2WG(1024 cycles/16ms Ref, SOJ, Gold) Fast Page Mode with Extended Data Out CAS-before-RAS refresh capability RAS-only and hidden refresh capability TTL compatible inputs and outputs Single +5V ±10% power supply JEDEC standard PDPin & pinout PCB : Height(750mil), single sided component PERFORMANCE RANGE Speed -5 -6 tRAC 50ns 60ns tCAC 15ns 17ns tRC 90ns 110ns tHPC 25ns 30ns PIN CONFIGURATIONS Pin 1 2 3 4 5 6 7 8 9 10 11...