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KMM53232004CK Dataheets PDF



Part Number KMM53232004CK
Manufacturers Samsung Semiconductor
Logo Samsung Semiconductor
Description 32MBx32 DRAM Simm Using 16MBx4
Datasheet KMM53232004CK DatasheetKMM53232004CK Datasheet (PDF)

DRAM MODULE KMM53232004CK/CKG 4Byte 32Mx32 SIMM (16Mx4 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53232004CK/CKG DRAM MODULE KMM53232004CK/CKG EDO Mode 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53232004C is a 32Mx32bits Dynamic RAM high density memory module. The Samsung KMM53232004C consists of sixteen CMOS 16Mx4bits DRAMs in SOJ pack.

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DRAM MODULE KMM53232004CK/CKG 4Byte 32Mx32 SIMM (16Mx4 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53232004CK/CKG DRAM MODULE KMM53232004CK/CKG EDO Mode 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53232004C is a 32Mx32bits Dynamic RAM high density memory module. The Samsung KMM53232004C consists of sixteen CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM53232004C is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets. KMM53232004CK/CKG FEATURES • Part Identification - KMM53232004CK(4K cycles/64ms Ref, SOJ, Solder) - KMM53232004CKG(4K cycles/64ms Ref, SOJ, Gold) • Extended Data Out Mode Operation • CAS-before-RAS & Hidden Refresh capability • RAS-only refresh capability • TTL compatible inputs and outputs • Single +5V ±10% power supply • JEDEC standard PDpin & pinout • PCB : Height(1420mil), double sided component PERFORMANCE RANGE Speed -5 -6 tRAC 50ns 60ns tCAC 13ns 15ns tRC 84ns 104ns tHPC 20ns 25ns PIN CONFIGURATIONS Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol VSS DQ0 DQ18 DQ1 DQ19 DQ2 DQ20 DQ3 DQ21 Vcc NC A0 A1 A2 A3 A4 A5 A6 A10 DQ4 DQ22 DQ5 DQ23 DQ6 DQ24 DQ7 DQ25 A7 A11 Vcc A8 A9 RAS3 RAS2 NC NC Pin 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 Symbol NC NC Vss CAS0 CAS2 CAS3 CAS1 RAS0 RAS1 NC W NC DQ9 DQ27 DQ10 DQ28 DQ11 DQ29 DQ12 DQ30 DQ13 DQ31 Vcc DQ32 DQ14 DQ33 DQ15 DQ34 DQ16 NC PD1 PD2 PD3 PD4 NC Vss PIN NAMES Pin Name A0 - A11 DQ0-7, DQ9-16 DQ18-25, DQ27-34 W RAS0 - RAS3 CAS0 - CAS3 PD1 -PD4 Vcc Vss NC Function Address Inputs Data In/Out Read/Write Enable Row Address Strobe Column Address Strobe Presence Detect Power(+5V) Ground No Connection PRESENCE DETECT PINS (Optional) Pin PD1 PD2 PD3 PD4 50NS NC Vss Vss Vss 60NS NC Vss NC NC SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. DRAM MODULE FUNCTIONAL BLOCK DIAGRAM KMM53232004CK/CKG CAS0 RAS0 DQ1 CAS DQ2 U0 RAS DQ3 OE W A0-A11 DQ4 DQ1 CAS DQ2 U1 RAS DQ3 OE W A0-A11 DQ4 DQ0~DQ3 DQ1 DQ2 DQ3 DQ4 DQ1 DQ2 DQ3 DQ4 CAS RAS W A0-A11 OE U8 CAS0 RAS1 DQ4~DQ7 CAS RAS W A0-A11 OE U9 CAS1 DQ1 CAS DQ2 U2 RAS DQ3 OE W A0-A11 DQ4 DQ1 CAS DQ2 U3 RAS DQ3 OE W A0-A11 DQ4 DQ1 CAS DQ2 U4 RAS DQ3 OE W A0-A11 DQ4 DQ1 CAS DQ2 U5 RAS DQ3 OE W A0-A11 DQ4 DQ9~DQ12 DQ1 DQ2 DQ3 DQ4 DQ1 DQ2 DQ3 DQ4 DQ1 DQ2 DQ3 DQ4 DQ1 DQ2 DQ3 DQ4 CAS RAS W A0-A11 OE U10 CAS1 DQ13~DQ16 CAS RAS W A0-A11 OE U11 DQ18~DQ21 CAS2 RAS2 CAS RAS W A0-A11 OE U12 CAS2 RAS3 DQ22~DQ25 CAS RAS W A0-A11 OE U13 CAS3 DQ1 CAS DQ2 U6 RAS DQ3 OE W A0-A11 DQ4 DQ1 CAS DQ2 U7 RAS DQ3 OE W A0-A11 DQ4 DQ27~DQ30 DQ1 DQ2 DQ3 DQ4 DQ1 DQ2 DQ3 DQ4 CAS RAS W A0-A11 OE U14 CAS3 DQ31~DQ34 CAS RAS W A0-A11 OE U15 W A0-A11 Vcc 0.1 or 0.22uF Capacitor for each DRAM Vss To all DRAMs DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative to VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol VIN, VOUT VCC Tstg Pd IOS KMM53232004CK/CKG Rating -1 to +7.0 -1 to +7.0 -55 to +125 16 50 Unit V V °C W mA * Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70°C) Item Supply Voltage Ground Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min 4.5 0 2.4 -1.0*2 Typ 5.0 0 Max 5.5 0 VCC*1 0.8 Unit V V V V *1 : VCC+2.0V at pulse width≤20ns, which is measured at VCC. *2 : -2.0V at pulse width≤20ns, whcih is measured at VSS. DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted) Symbol ICC1 ICC2 ICC3 ICC4 ICC5 ICC6 II(L) IO(L) VOH VOL Speed -5 -6 Don′t care -5 -6 -5 -6 Don′t care -5 -6 Don′t care Don′t care KMM53232004CK/CKG Min - Max 976 896 32 976 896 896 816 16 976 896 10 10 0.4 Unit mA mA mA mA mA mA mA mA mA mA uA uA V V -10 -10 2.4 - ICC1 : Operating Current * (RAS, CAS, Address cycling @tRC=min) ICC2 : Standby Current (RAS=CAS=W=VIH) ICC3 : RAS Only Refresh Current * (CAS=VIH, RAS cycling @tRC=min) ICC4 : Hyper Page Mode Current * (RAS=VIL, CAS cycling : tHPC =min) ICC5 : Standby Current (RAS=CAS=W=Vcc-0.2V) ICC6 : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min) I(IL) : Input Leakage Current (Any input 0≤VIN≤Vcc+0.5V, all other pins not under test=0 V) I(OL) : Output Leakage Current(Data Out is disabled, 0V.


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