IRFM120A

Advanced Power MOSFET FEATURES IRFM120A BVDSS = 100 V RDS(on) = 0.2 ! ID = 2.3 A SOT-223 2 IEEE802.3af Compatible ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 #A (Max.) @ VDS = 100V ! Lower RDS(ON) : 0.155 ! (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25%) Continuous Drain Current (TA=70%) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25%) * Linear Derating Factor * Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds ' & & ( & Value 100 2.3 1.84 18 "20 123 2.3 0.24 6.5 2.4 0.019 - 55 to +150 Units V A A V mJ A mJ V/ns W W/% % 300 Thermal Resistance Symbol R$JA Characteristic Junction-to-Ambient * Typ. -Max. 52 Units %/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. C IRFM120A Electrical Characteristics (TA=25% unless otherwise specified) Symbol BVDSS .BV/.TJ VGS(th) IGSS Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Min. Typ. Max. Units 10...