IRFM054

IRFM054 MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES HERMETICALLY SEALED ISOLATED PACKAGE AVALANCHE ENERGY RATING 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 1 2 3 20.07 (0.790) 20.32 (0.800) 60V 35A * 0.027Ω 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC SIMPLE DRIVE REQUIREMENTS 3.81 (0.150) BSC TO–254AA – Metal Package Pin 1 – Drain Pin 2 – Source Pin 3 – Gate ALSO AVAILABLE IN TO–220 METAL AND SURFACE MOUNT PACKAGES EASE OF PARALLELING ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS dv/dt TJ , Tstg TL RθJC RθCS RθJA Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy 2 Peak Diode Recovery 3 Operating and Storage Temperature Range Lead Temperature measured 1/16” (1.6mm) from case for 10 sec. Thermal Resistance Junction to Case Thermal Resistance Case to Sink (Typical) Thermal Resistance Junction to Ambient (VGS = 10V , Tcase = 25°C) (VGS = 10V , Tcase = 100°C) ±20V 35A* 35A 220A 150W 1.2W/°C 480mJ 4.5V/ns –55 to 150°C 300°C 0.83°C/W 0.21°C/W 48°C/W Notes 1) Repetitive Rating – Pulse width limited by Maximum Junction Temperature 2) @ VDD = 25V , L ≥ 450µH , RG = 25Ω , Peak IL = 35A , Starting ...