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PM300RSE060 Dataheets PDF



Part Number PM300RSE060
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description General purpose inverter
Datasheet PM300RSE060 DatasheetPM300RSE060 Datasheet (PDF)

MITSUBISHI MITSUBISHI MODULES> PM300RSE060 PM300RSE060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM300RSE060 FEATURE a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V b) Using new Diode which is designed to get soft reverse recovery characteristics. • 3φ 300A, 600V Current-sense IGBT for 15kHz switching • 100A, 600V Current-sense rege.

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MITSUBISHI MITSUBISHI MODULES> PM300RSE060 PM300RSE060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM300RSE060 FEATURE a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V b) Using new Diode which is designed to get soft reverse recovery characteristics. • 3φ 300A, 600V Current-sense IGBT for 15kHz switching • 100A, 600V Current-sense regenerative brake IGBT • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage • Acoustic noise-less 30kW class inverter application APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 135 ±1 120.5 ±0.5 0.5 ±0.3 39.7 LABEL 4- φ5.5 MOUNTING HOLES 24.1 Terminal code 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. VUPC UP VUP1 VVPC VP VVP1 VWPC WP VWP1 VNC 11. 12. 13. 14. 15. 16. VN1 Br UN VN WN FO 16.5 1 23 456 789 3.22 10.16 10.16 10.16 20 39.5 10.5 φ2.54 U 51.5 A 2-φ2.54 V 26 16- 95.5 ±0.5 110 ±1 2-2.54 2-2.54 2-2.54 6-2.54 67.4 74.4 20 11 11 13 15 10 12 14 16 13 W 3.22 4-R6 6-M5 NUTS 2-2.54 0.64 26 0.64 11.6 33.7 34.7 24.1 –0.5 4 +1.0 21.3 A : DETAIL 10.6 Screwing depth Min9.0 5 P N B PPS Sep. 2001 MITSUBISHI PM300RSE060 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM Rfo=1.5kΩ Br Fo VNC W N VN1 VN UN VWPC WP VWP1 VVPC VP VVP1 VUPC UP VUP1 Rfo Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Vcc Gnd In Vcc Gnd In Vcc Gnd Si Out Gnd Si Out Gnd Si Out Gnd Si Out Gnd Si Out Gnd Si Out Gnd Si Out Th B N W V U P MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCES ±IC ±ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25°C TC = 25°C TC = 25°C Ratings 600 300 600 781 –20 ~ +150 Unit V A A W °C BRAKE PART Symbol VCES IC ICP PC VR(DC) IF Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation FWDi Rated DC Reverse Voltage FWDi Forward Current Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25°C TC = 25°C TC = 25°C TC = 25°C TC = 25°C Ratings 600 100 200 416 600 100 –20 ~ +150 Unit V A A W V A °C CONTROL PART Symbol VD VCIN VFO IFO Parameter Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Condition Applied between : VUP1-VUPC VVP1-VVPC, VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC WP-VWPC, UN • VN • WN • Br-VNC Applied between : FO-VNC Sink current at FO terminal Ratings 20 20 20 20 Unit V V V mA Sep. 2001 MITSUBISHI PM300RSE060 FLAT-BASE TYPE INSULATED PACKAGE TOTAL SYSTEM Parameter Supply Voltage Protected by VCC(PROT) OC & SC VCC(surge) Supply Voltage (Surge) Module Case Operating TC Temperature Storage Temperature Tstg Isolation Voltage Viso Symbol Condition VD = 13.5 ~ 16.5V, Inverter Part, Tj = 125°C Start Applied between : P-N, Surge value or without switching (Note-1) Ratings 400 500 –20 ~ +100 –40 ~ +125 2500 Unit V V °C °C Vrms 60Hz, Sinusoidal, Charged part to Base, AC 1 min. (Note-1) Tc measurement point is as shown below. (Base plate depth 3mm) Tc THERMAL RESISTANCES Symbol Rth(j-c)Q Rth(j-c)F Rth(j-c)Q Rth(j-c)F Rth(j-c’)Q Rth(j-c’)F Rth(j-c’)Q Rth(j-c’)F Rth(c-f) Parameter Test Condition Inverter IGBT part (per 1 element), (Note-1) Inverter FWDi part (per 1 element), (Note-1) Brake IGBT part, (Note-1) Brake FWDi part, (Note-1) Inverter IGBT part (per 1 element), (Note-2) Inverter FWDi part (per 1 element), (Note-2) Brake IGBT part, (Note-2) Brake FWDi part, (Note-2) Case to fin, Thermal grease applied (per 1 module) Min. — — — — — — — — — Limits Typ. — — — — — — — — — Max. 0.16 0.24 0.30 0.80 0.10 0.16 0.22 0.36 0.018 Unit Junction to case Thermal Resistances Contact Thermal Resistance (Note-2) TC measurement point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Test Condition VD = 15V, IC = 300A (Fig. 1) VCIN = 0V, Pulsed –IC = 300A, VD = 15V, VCIN = 15V VD = 15V, VCIN = 15V↔0V VCC = 300V, IC = 300A Tj = 125°C Inductive Load (upper and lower arm) VCE = VCES, VCIN = 15V (Fig. 4) Tj = 25°C Tj = 125°C (Fig. 2) Min. — — — 0.4 — — — — — — Limits Typ. 1.7 1.7 2.2 0.8 0.15 0.4 2.0 0.6 — — Max. 2.3 2.3 3.3 2.0 0.3 1.0 2.9 1.2 1 10 Unit V V Switching Time Collector-Emitter Cutoff Current P N B U V W 63mm °C/W µs (Fig. 3) Tj = 25°C Tj = 125°C mA Sep. 2001 MITSUBISHI PM300RSE060 FLAT-BA.


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