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TK19H50C Dataheets PDF



Part Number TK19H50C
Manufacturers Toshiba
Logo Toshiba
Description Silicon N-Channel MOSFET
Datasheet TK19H50C DatasheetTK19H50C Datasheet (PDF)

TK19H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) TK19H50C Switching Regulator Applications Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 0. 25Ω (typ.) : |Yfs| = 14 S (typ.) Unit: mm : IDSS = 100 µA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note.

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TK19H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) TK19H50C Switching Regulator Applications Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 0. 25Ω (typ.) : |Yfs| = 14 S (typ.) Unit: mm : IDSS = 100 µA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 19 76 150 968 19 15 150 −55~150 Unit V V V A A W mJ A mJ °C °C Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1: GATE 2: DRAIN (HEAT SINK) 3: SOURCE JEDEC JEITA TOSHIBA ― ― 2-16K1A Weight: 3.8 g (typ.) Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 0.833 50 Unit °C / W °C / W 1 2 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.56 mH, RG = 25 Ω, IAR = 19 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 3 1 2005-08-23 TK19H50C Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Gate−source breakdown voltage Drain cutoff current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 50 Ω tf toff Qg Qgs Qgd VDD ≈ 400 V, VGS = 10 V, ID = 19 A 10 V 0V ID = 9.5A RL = 21 Ω VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = ±10 µA, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 9.5 A VDS = 10 V, ID = 9.5 A Min — ±30 — 500 2.0 — 4.0 — — — — Typ. — — — — — 0.25 14 3100 20 270 70 Max ±10 — 100 — 4.0 0.30 — — — — — pF Unit µA V µA V V Ω S VGS Turn on time Switching time Fall time — 130 — ns VDD ∼ − 200 V Duty < = 1%, tw = 10 µs — 70 — Turn off time Total gate charge (gate−source plus gate−drain) Gate−source charge Gate−drain (“Miller”) charge — — — — 280 62 40 22 — — — — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition — — IDR = 19 A, VGS = 0 V IDR = 19 A, VGS = 0 V dIDR / dt = 100 A / µs Min — — — — — Typ. — — — 1200 18 Max 19 76 −1.7 — — Unit A A V ns µC Marking TOSHIBA TK19H50C Part No. (or abbreviation code) Lot No. A line indicates a lead (Pb)-free package or lead (Pb)-free finish. 2 2005-08-23 TK19H50C ID – VDS 10 Common source Tc = 25°C Pulse Test 10 20 6 5.5 16 8 5.25 6 5 4 10 8 ID – VDS 6 Common source Tc = 25°C Pulse Test 8 (A) ID ID (A) 5.75 12 5.5 8 5 4 4.5 VGS = 4 V Drain current 2 4.5 VGS = 4V 0 0 1 2 3 4 5 Drain current 0 0 10 20 30 40 50 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS 80 20 Common source VDS = 10 V Pulse Test VDS – VGS Common source Tc = 25°C Pulse Test 16 60 ID (A) VDS (V) Drain-source voltage Tc = −55°C 12 Drain current 40 25 100 20 8 ID = 19 A 4 9.5 4 0 0 2 4 6 8 10 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| – ID 100 1.0 Common source VDS = 10 V Pulse Test RDS (ON) – ID Forward transfer admittance Tc = −55°C 10 100 25 Drain-source ON resistance RDS (ON) (Ω) ⎪Yfs⎪ (S) Common source Tc = 25°C VGS = 10 V Pulse Test 0.1 1 10 100 1 1 10 100 Drain current ID (A) Drain current ID (A) 3 2005-08-23 TK19H50C RDS (ON) − Tc 1.0 IDR − VDS 100 Common source Tc = 25°C Pulse Test RDS (ON) (Ω) 0.8 Drain reverse current IDR (A) 9.5 10 ID = 19A 4 Common source VGS = 10 V Pulse Test Drain-source ON resistance 0.6 0.4 1 10 5 3 0.2 0 −80 1 0.4 0.6 −40 0 40 80 120 160 0.1 VGS = 0 V 0.8 1.0 1.2 0 0.2 Case temperature Tc (°C) Drain-source voltage VDS (V) Capacitance – VDS 10000 Ciss 5 Vth − Tc Common source VDS = 10 V ID = 1mA Pulse Test (V) 4 1000 (pF) Coss Vth Capacitance 100 Crss 10 Gate threshold voltage C 3 2 Common source VGS = 0 V f = 1 MHz Tc = 25°C 1 10 100 1 1 0.1 0 −80 −40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (°C) PD − Tc 200 500 Dynamic input / output characteristics 20 VDS 400 200V 300 VDD = 100V 200 VGS 100 Common source ID = 19 A Ta = 25°C Pulse Test 0 0 20 40 60 80 0 100 4 400V 8 12 16 (W) PD 150 VDS (V) Drain power dissipation 100 50 0 0 40 80 120 .


STRG6653 TK19H50C 2SD5041


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