Document
TK19H50C
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
TK19H50C
Switching Regulator Applications
Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 0. 25Ω (typ.) : |Yfs| = 14 S (typ.) Unit: mm
: IDSS = 100 µA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 19 76 150 968 19 15 150 −55~150 Unit V V V A A W mJ A mJ °C °C
Pulse (Note 1)
Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
1: GATE 2: DRAIN (HEAT SINK) 3: SOURCE
JEDEC JEITA TOSHIBA
― ― 2-16K1A
Weight: 3.8 g (typ.)
Thermal Characteristics
Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 0.833 50 Unit °C / W °C / W 1
2
Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.56 mH, RG = 25 Ω, IAR = 19 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.
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TK19H50C
Electrical Characteristics (Ta = 25°C)
Characteristic Gate leakage current Gate−source breakdown voltage Drain cutoff current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 50 Ω tf toff Qg Qgs Qgd VDD ≈ 400 V, VGS = 10 V, ID = 19 A 10 V 0V ID = 9.5A RL = 21 Ω VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = ±10 µA, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 9.5 A VDS = 10 V, ID = 9.5 A Min — ±30 — 500 2.0 — 4.0 — — — — Typ. — — — — — 0.25 14 3100 20 270 70 Max ±10 — 100 — 4.0 0.30 — — — — — pF Unit µA V µA V V Ω S
VGS
Turn on time Switching time Fall time
—
130
— ns
VDD ∼ − 200 V Duty < = 1%, tw = 10 µs
—
70
—
Turn off time Total gate charge (gate−source plus gate−drain) Gate−source charge Gate−drain (“Miller”) charge
— — — —
280 62 40 22
— — — — nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition — — IDR = 19 A, VGS = 0 V IDR = 19 A, VGS = 0 V dIDR / dt = 100 A / µs Min — — — — — Typ. — — — 1200 18 Max 19 76 −1.7 — — Unit A A V ns µC
Marking
TOSHIBA
TK19H50C
Part No. (or abbreviation code) Lot No. A line indicates a lead (Pb)-free package or lead (Pb)-free finish.
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ID – VDS
10 Common source Tc = 25°C Pulse Test 10 20 6 5.5 16 8 5.25 6 5 4 10 8
ID – VDS
6 Common source Tc = 25°C Pulse Test
8
(A)
ID
ID
(A)
5.75 12 5.5 8 5 4 4.5 VGS = 4 V
Drain current
2
4.5 VGS = 4V
0 0 1 2 3 4 5
Drain current
0
0
10
20
30
40
50
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
ID – VGS
80 20 Common source VDS = 10 V Pulse Test
VDS – VGS
Common source Tc = 25°C Pulse Test 16
60
ID (A)
VDS (V) Drain-source voltage
Tc = −55°C
12
Drain current
40 25 100 20
8 ID = 19 A 4 9.5 4
0
0
2
4
6
8
10
0
0
4
8
12
16
20
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
|Yfs| – ID
100 1.0 Common source VDS = 10 V Pulse Test
RDS (ON) – ID
Forward transfer admittance
Tc = −55°C 10
100
25
Drain-source ON resistance
RDS (ON) (Ω)
⎪Yfs⎪
(S)
Common source Tc = 25°C VGS = 10 V Pulse Test 0.1 1 10 100
1
1
10
100
Drain current ID
(A)
Drain current ID
(A)
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TK19H50C
RDS (ON) − Tc
1.0
IDR − VDS
100 Common source Tc = 25°C Pulse Test
RDS (ON) (Ω)
0.8
Drain reverse current IDR
(A)
9.5 10 ID = 19A 4
Common source VGS = 10 V Pulse Test
Drain-source ON resistance
0.6
0.4
1 10 5 3
0.2
0 −80
1 0.4 0.6
−40
0
40
80
120
160
0.1
VGS = 0 V 0.8 1.0 1.2
0
0.2
Case temperature
Tc
(°C)
Drain-source voltage
VDS
(V)
Capacitance – VDS
10000 Ciss 5
Vth − Tc
Common source VDS = 10 V ID = 1mA Pulse Test
(V)
4
1000
(pF)
Coss
Vth
Capacitance
100 Crss 10
Gate threshold voltage
C
3
2
Common source VGS = 0 V f = 1 MHz Tc = 25°C 1 10 100
1
1 0.1
0 −80
−40
0
40
80
120
160
Drain-source voltage
VDS
(V)
Case temperature
Tc
(°C)
PD − Tc
200 500
Dynamic input / output characteristics
20 VDS 400 200V 300 VDD = 100V 200 VGS 100 Common source ID = 19 A Ta = 25°C Pulse Test 0 0 20 40 60 80 0 100 4 400V 8 12 16
(W)
PD
150
VDS (V)
Drain power dissipation
100
50
0
0
40
80
120
.