KRC669E

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION KRC666E~KRC672E EPITAXIAL PLANAR NPN TRANSISTOR B FEATURES With Built-in Bias Resistors. Reduce a Quantity of Parts and Manufacturing Process. A1 A C B1 Simplify Circuit Design. 1 5 DIM A A1 B 2 3 4 B1 C D H J P MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2+ 0.50 _ 0.05 0.2 + _ 0.05 0.5 + C EQUIVALENT CIRCUIT OUT R1 R2 D P P TYPE NO. KRC666E R1(k 1 2.2 2.2 4.7 10 47 100 ) R2(k 10 2.2 10 10 4.7 10 100 ) H J _ 0.05 0.12 + 5 IN KRC667E KRC668E KRC669E COMMON 1. Q 1 IN (BASE) 2. Q 1, Q 2 COMMON (EMITTER) 3. Q 2 IN (BASE) 4. Q 2 OUT (COLLECTOR) 5. Q 1 OUT (COLLECTOR) KRC670E KRC671E KRC672E TESV EQUIVALENT CIRCUIT (TOP VIEW) 5 4 Q1 Q2 MAXIMUM RATING (Ta=25 Output Voltage ) SYMBOL KRC666E~672E KRC666E KRC667E KRC668E VO 1 2 3 CHARACTERISTIC RATING 50 10, -5 12, -10 12,-5 UNIT V Input Voltage KRC669E KRC670E KRC671E KRC672E VI 20, -7 30, -10 40, -15 40, -10 V Output Current Power Dissipation Junction Temperature Storage Temperature Range * Total Rating. KRC666E~672E IO PD * Tj Tstg 5 100 200 150 -55 150 mA mW Marking 4 Type Name MARK SPEC TYPE MARK KRC666E KRC667E KRC668E KRC669E KRC670E KRC671E KRC672E N2 N4 N5 N6 N7 N8 N9 1 2 3 2002. 7. 10 Revision No : 2 1/6 KRC666E~KRC672E ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Output Cut-off Current KRC666E~672E KRC666E KRC667E KRC668E DC Current Gain KRC669E KRC...