Document
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION
KRC666E~KRC672E
EPITAXIAL PLANAR NPN TRANSISTOR
B
FEATURES
With Built-in Bias Resistors. Reduce a Quantity of Parts and Manufacturing Process.
A1 A C
B1
Simplify Circuit Design.
1
5
DIM A
A1 B
2
3
4
B1 C D H J P
MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2+
0.50 _ 0.05 0.2 + _ 0.05 0.5 +
C
EQUIVALENT CIRCUIT
OUT R1 R2
D
P
P
TYPE NO. KRC666E
R1(k 1 2.2 2.2 4.7 10 47 100
)
R2(k 10 2.2 10 10 4.7 10 100
)
H J
_ 0.05 0.12 + 5
IN
KRC667E KRC668E KRC669E
COMMON
1. Q 1 IN (BASE) 2. Q 1, Q 2 COMMON (EMITTER) 3. Q 2 IN (BASE) 4. Q 2 OUT (COLLECTOR) 5. Q 1 OUT (COLLECTOR)
KRC670E KRC671E KRC672E
TESV
EQUIVALENT CIRCUIT (TOP VIEW)
5 4
Q1
Q2
MAXIMUM RATING (Ta=25
Output Voltage
)
SYMBOL KRC666E~672E KRC666E KRC667E KRC668E VO
1
2
3
CHARACTERISTIC
RATING 50 10, -5 12, -10 12,-5
UNIT V
Input Voltage
KRC669E KRC670E KRC671E KRC672E
VI
20, -7 30, -10 40, -15 40, -10
V
Output Current Power Dissipation Junction Temperature Storage Temperature Range * Total Rating. KRC666E~672E
IO PD * Tj Tstg
5
100 200 150 -55 150
mA mW
Marking
4
Type Name
MARK SPEC
TYPE MARK KRC666E KRC667E KRC668E KRC669E KRC670E KRC671E KRC672E N2 N4 N5 N6 N7 N8 N9
1 2 3
2002. 7. 10
Revision No : 2
1/6
KRC666E~KRC672E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Output Cut-off Current KRC666E~672E KRC666E KRC667E KRC668E DC Current Gain KRC669E KRC670E KRC671E KRC672E KRC666E KRC667E KRC668E Output Voltage KRC669E KRC670E KRC671E KRC672E KRC666E KRC667E KRC668E Input Voltage (ON) KRC669E KRC670E KRC671E KRC672E KRC666E KRC667E KRC668E Input Voltage (OFF) KRC669E KRC670E KRC671E KRC672E Transition Frequency KRC666E~672E KRC666E KRC667E KRC668E Input Current KRC669E KRC670E KRC671E KRC672E Note : * Characteristic of Transistor Only. II VI=5V f T* VO=10V, IO=5mA VI(OFF) VCC=5V, IO=100 A VI(ON) VO(ON) GI SYMBOL IO(OFF) TEST CONDITION VO=50V, VI=0 VO=5V, IO=5mA VO=5V, IO=20mA VO=5V, IO=10mA VO=5V, IO=10mA VO=5V, IO=10mA VO=5V, IO=5mA VO=5V, IO=5mA IO=10mA, II=0.5mA IO=10mA, II=0.5mA IO=10mA, II=0.5mA IO=10mA, II=0.5mA IO=10mA, II=0.5mA IO=10mA, II=0.5mA IO=5mA, II=0.25mA VO=0.3V, IO=20mA VO=0.3V, IO=20mA VO=0.3V, IO=20mA VO=0.3V, IO=20mA VO=0.3V, IO=2mA VO=0.3V, IO=2mA VO=0.3V, IO=1mA MIN. 33 20 33 30 24 33 62 0.3 0.5 0.3 0.3 0.8 1 0.5 TYP. 0.1 0.1 0.1 0.1 0.1 0.98 1.83 1.22 1.76 2 3.9 1.64 0.63 1.15 0.67 0.82 1.68 3.09 1.17 250 MAX. 500 0.3 0.3 0.3 0.3 0.3 0.3 0.3 3 3 3 2.5 3 5 3 7.2 3.8 3.8 1.8 0.88 0.16 0.15 mA MHz V V V UNIT nA
2002. 7. 10
Revision No : 2
2/6
KRC666E~KRC672E
100
KRC666E
I O - V I(ON)
100
KRC667E
I O - V I(ON)
OUTPUT CURRENT IO (mA)
OUTPUT CURRENT I O (mA)
50 30 10 5 3 1 0.5 0.3 0.1 0.3 1 3
VO =0.2V Ta=25 C Ta=-25 C
50 30 10 5 3 1 0.5 0.3 0.1
VO =0.2V Ta=100 C
Ta=25 C Ta=-25 C
Ta=100 C
10
0.1
0.3
1
3
10
INPUT ON VOLTAGE V I(ON) (V)
INPUT ON VOLTAGE V I(ON) (V)
3k
KRC666E
I O - V.