SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES
With Buil...
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES
With Built-in Bias Resistors.
A1
KRC660U~KRC664U
EPITAXIAL PLANAR
NPN TRANSISTOR
B B1 1 5
Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. High Packing Density.
A
2 3 4 D
DIM A A1 B
B1 C D G H
MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 +
0.65 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + 0.15+0.1/-0.05
EQUIVALENT CIRCUIT
C B R1
EQUIVALENT CIRCUIT (TOP VIEW)
H
C
C
5
4
T G
T
Q1
Q2
1. Q 1 IN (BASE) 2. Q 1, Q 2 COMMON (EMITTER) 3. Q 2 IN (BASE) 4. Q 2 OUT (COLLECTOR) 5. Q 1 OUT (COLLECTOR)
E
1
2
3
USV
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
)
SYMBOL VCBO VCEO VEBO IC RATING 50 50 5 100 UNIT V V V mA CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Rating. SYMBOL PC * Tj Tstg RATING 200 150 -55 150 UNIT mW
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency KRC660U KRC661U Input Resistor KRC662U KRC663U KRC664U Note : * Characteristic of
Transistor Only.
)
SYMBOL ICBO IEBO hFE VCE(sat) fT * TEST CONDITION VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA MIN. 120 R1 TYP. 0.1 250 4.7 10 100 22 47
Type Name
4
MAX. 100 100 0.3 -
UNIT nA n...
