KRC681T

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. C A F KRC681T~KRC686T EPITAXIAL PLANAR NPN TRANSISTOR E B 1 5 DIM MILLIMETERS _ 0.2 A 2.9 + B C D E F G H I J K L 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 G 2 3 4 G J C R1 5 4 1. Q 1 IN (BASE) 2. Q 1, Q 2 COMMON (EMITTER) 3. Q 2 IN (BASE) 4. Q 2 OUT (COLLECTOR) 5. Q 1 OUT (COLLECTOR) B Q1 Q2 E 1 2 3 MAXIMUM RATING (Ta=25 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC PC * Tj Tstg 0.8 ) RATING 50 20 25 300 0.9 150 -55 150 UNIT V V V mA W CHARACTERISTIC * Package mounted on a ceramic board (600 MARK SPEC TYPE KRC681T KRC682T KRC683T KRC684T KRC685T KRC686T hFE classification B MQB MRB MSB MTB MUB MVB 1 2 3 Marking h FE Rank Type Name 5 4 2002. 12. 5 Revision No : 3 I EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT (TOP VIEW) L J H TSV Lot No. D 1/2 KRC681T~KRC686T ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Break...