KRC832E

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES With Built-in Bias Resistors. Reduce a Quantity of Parts and Manufacturing Process. High Packing Density. A1 KRC830E~KRC834E EPITAXIAL PLANAR NPN TRANSISTOR B B1 Simplify Circuit Design. A C 1 6 5 2 3 4 EQUIVALENT CIRCUIT C B R1 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 H P P DIM A A1 B B1 C D H J P MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2 + 0.50 _ 0.05 0.2 + _ 0.05 0.5 + _ 0.05 0.12 + 5 C Q1 Q2 E 1 2 3 1. 2. 3. 4. 5. 6. Q1 Q2 Q2 Q2 Q1 Q1 EMITTER EMITTER BASE COLLECTOR BASE COLLECTOR TES6 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current ) SYMBOL VCBO VCEO VEBO IC RATING 50 50 5 100 UNIT V V V mA CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Raing. SYMBOL PC * Tj Tstg RATING 200 150 -55 150 UNIT mW ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency KRC830E KRC831E Input Resistor KRC832E KRC833E KRC834E ) SYMBOL ICBO IEBO hFE VCE(sat) fT * TEST CONDITION VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA MIN. 120 R1 TYP. 0.1 250 4.7 10 100 22 47 Type Name 5 4 J D MAX. 100 100 0.3 - UNIT nA nA V MHz k Note : * Characteristic of Transistor Only. MARK S...