SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES ᴌWith Bui...
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. ᴌReduce a Quantity of Parts and Manufacturing Process. ᴌHigh Packing Density.
EQUIVALENT CIRCUIT
OUT
R1 IN
R2
COMMON
BIAS RESISTOR VALUES
TYPE NO. R1(kή) R2(kή)
KRC827E
10
47
KRC828E
22
47
KRC829E
47
22
A
KRC827E~KRC829E
EPITAXIAL PLANAR
NPN TRANSISTOR
C
A1
B B1
1
6
DIM MILLIMETERS
A
1.6+_ 0.05
2
5
A1
1.0 +_ 0.05
B
1.6+_ 0.05
B1
1.2 +_ 0.05
D
3
4
C
0.50
D
0.2+_ 0.05
H
0.5+_ 0.05
P
J
0.12+_ 0.05
P
P
5
C
H
J
1. Q1 COMMON (EMITTER) 2. Q2 COMMON (EMITTER) 3. Q2 IN (BASE) 4. Q2 OUT (COLLECTOR) 5. Q1 IN (BASE) 6. Q1 OUT (COLLECTOR)
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Q1 Q2
MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC
Output Voltage
KRC827Eᴕ829E
KRC827E
Input Voltage
KRC828E
KRC829E
Output Current
Power Dissipation Junction Temperature
KRC827Eᴕ829E
Storage Temperature Range
* Total Rating.
MARK SPEC TYPE MARK
KRC827E YH
KRC828E YI
KRC829E YJ
1
2
3
SYMBOL VO
VI
IO PD * Tj Tstg
RATING 50
30, -6 40, -7 40,-15 100 200 150 -55ᴕ150
Marking
Type Name
654
1 23
2002. 1. 24
Revision No : 1
UNIT V V mA mW ᴱ ᴱ
1/4
KRC827E~KRC829E
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Output Cut-off Current
KRC827Eᴕ829E KRC827E
IO(OFF)
DC Current Gain
KRC828E
GI
KRC829E
Output Voltage
KRC827Eᴕ829E
VO(ON)
KRC827E
Input Voltage (ON)
...