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KRC827E

Korea Electronics

NPN Transistor

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ᴌWith Bui...


Korea Electronics

KRC827E

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Description
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. ᴌReduce a Quantity of Parts and Manufacturing Process. ᴌHigh Packing Density. EQUIVALENT CIRCUIT OUT R1 IN R2 COMMON BIAS RESISTOR VALUES TYPE NO. R1(kή) R2(kή) KRC827E 10 47 KRC828E 22 47 KRC829E 47 22 A KRC827E~KRC829E EPITAXIAL PLANAR NPN TRANSISTOR C A1 B B1 1 6 DIM MILLIMETERS A 1.6+_ 0.05 2 5 A1 1.0 +_ 0.05 B 1.6+_ 0.05 B1 1.2 +_ 0.05 D 3 4 C 0.50 D 0.2+_ 0.05 H 0.5+_ 0.05 P J 0.12+_ 0.05 P P 5 C H J 1. Q1 COMMON (EMITTER) 2. Q2 COMMON (EMITTER) 3. Q2 IN (BASE) 4. Q2 OUT (COLLECTOR) 5. Q1 IN (BASE) 6. Q1 OUT (COLLECTOR) TES6 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 Q1 Q2 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Output Voltage KRC827Eᴕ829E KRC827E Input Voltage KRC828E KRC829E Output Current Power Dissipation Junction Temperature KRC827Eᴕ829E Storage Temperature Range * Total Rating. MARK SPEC TYPE MARK KRC827E YH KRC828E YI KRC829E YJ 1 2 3 SYMBOL VO VI IO PD * Tj Tstg RATING 50 30, -6 40, -7 40,-15 100 200 150 -55ᴕ150 Marking Type Name 654 1 23 2002. 1. 24 Revision No : 1 UNIT V V mA mW ᴱ ᴱ 1/4 KRC827E~KRC829E ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Output Cut-off Current KRC827Eᴕ829E KRC827E IO(OFF) DC Current Gain KRC828E GI KRC829E Output Voltage KRC827Eᴕ829E VO(ON) KRC827E Input Voltage (ON) ...




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