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KRC838E Dataheets PDF



Part Number KRC838E
Manufacturers Korea Electronics
Logo Korea Electronics
Description (KRC836E - KRC842E) EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet KRC838E DatasheetKRC838E Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES With Built-in Bias Resistors. Reduce a Quantity of Parts and Manufacturing Process. A1 KRC836E~KRC842E EPITAXIAL PLANAR NPN TRANSISTOR B B1 Simplify Circuit Design. A C 1 6 5 2 3 4 EQUIVALENT CIRCUIT H P P DIM A A1 B B1 C D H J P MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2 + 0.50 _ 0.05 0.2 + _ 0.05 0.5 + _ 0.05 0.12 + 5 C OUT R1 R2 TYPE NO. KRC836E R1.

  KRC838E   KRC838E



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SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES With Built-in Bias Resistors. Reduce a Quantity of Parts and Manufacturing Process. A1 KRC836E~KRC842E EPITAXIAL PLANAR NPN TRANSISTOR B B1 Simplify Circuit Design. A C 1 6 5 2 3 4 EQUIVALENT CIRCUIT H P P DIM A A1 B B1 C D H J P MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2 + 0.50 _ 0.05 0.2 + _ 0.05 0.5 + _ 0.05 0.12 + 5 C OUT R1 R2 TYPE NO. KRC836E R1(k 1 2.2 2.2 4.7 10 47 100 ) R2(k 10 2.2 10 10 4.7 10 100 ) IN KRC837E KRC838E KRC839E COMMON 1. 2. 3. 4. 5. 6. KRC840E KRC841E KRC842E Q1 Q2 Q2 Q2 Q1 Q1 COMMON (EMITTER) COMMON (EMITTER) IN (BASE) OUT (COLLECTOR) IN (BASE) OUT (COLLECTOR) TES6 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 Q1 J D Q2 MAXIMUM RATING (Ta=25 Output Voltage ) SYMBOL KRC836E~842E KRC836E KRC837E KRC838E VO 1 2 3 CHARACTERISTIC RATING 50 10, -5 12, -10 12,-5 UNIT V Input Voltage KRC839E KRC840E KRC841E KRC842E VI 20, -7 30, -10 40, -15 40, -10 V Output Current Power Dissipation Junction Temperature Storage Temperature Range * Total Rating. KRC836E~842E IO PD * Tj Tstg 100 200 150 -55 150 mA mW Marking 6 5 4 Type Name MARK SPEC TYPE MARK KRC836E KRC837E KRC838E KRC839E KRC840E KRC841E KRC842E Y2 Y4 Y5 Y6 Y7 Y8 Y9 1 2 3 2002. 7. 10 Revision No : 2 1/6 KRC836E~KRC842E ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Output Cut-off Current KRC836E~842E KRC836E KRC837E KRC838E DC Current Gain KRC839E KRC840E KRC841E KRC842E KRC836E KRC837E KRC838E Output Voltage KRC839E KRC840E KRC841E KRC842E KRC836E KRC837E KRC838E Input Voltage (ON) KRC839E KRC840E KRC841E KRC842E KRC836E KRC837E KRC838E Input Voltage (OFF) KRC839E KRC840E KRC841E KRC842E Transition Frequency KRC836E~842E KRC836E KRC837E KRC838E Input Current KRC839E KRC840E KRC841E KRC842E Note : * Characteristic of Transistor Only. II VI=5V f T* VO=10V, IO=5mA VI(OFF) VCC=5V, IO=100 A VI(ON) VO(ON) GI SYMBOL IO(OFF) TEST CONDITION VO=50V, VI=0 VO=5V, IO=5mA VO=5V, IO=20mA VO=5V, IO=10mA VO=5V, IO=10mA VO=5V, IO=10mA VO=5V, IO=5mA VO=5V, IO=5mA IO=10mA, II=0.5mA IO=10mA, II=0.5mA IO=10mA, II=0.5mA IO=10mA, II=0.5mA IO=10mA, II=0.5mA IO=10mA, II=0.5mA IO=5mA, II=0.25mA VO=0.3V, IO=20mA VO=0.3V, IO=20mA VO=0.3V, IO=20mA VO=0.3V, IO=20mA VO=0.3V, IO=2mA VO=0.3V, IO=2mA VO=0.3V, IO=1mA MIN. 33 20 33 30 24 33 62 0.3 0.5 0.3 0.3 0.8 1 0.5 TYP. 0.1 0.1 0.1 0.1 0.1 0.98 1.83 1.22 1.76 2 3.9 1.64 0.63 1.15 0.67 0.82 1.68 3.09 1.17 250 MAX. 500 0.3 0.3 0.3 0.3 0.3 0.3 0.3 3 3 3 2.5 3 5 3 7.2 3.8 3.8 1.8 0.88 0.16 0.15 mA MHz V V V UNIT nA 2002. 7. 10 Revision No : 2 2/6 KRC836E~KRC842E 100 KRC836E I O - V I(ON) 100 KRC837E I O - V I(ON) OUTPUT CURRENT IO (mA) OUTPUT CURRENT I O (mA) 50 30 10 5 3 1 0.5 0.3 0.1 0.3 1 3 VO =0.2V Ta=25 C Ta=-25 C 50 30 10 5 3 1 0.5 0.3 0.1 VO =0.2V Ta=100 C Ta=25 C Ta=-25 C Ta=100 C 10 0.1 0.3 1 3 10 INPUT ON VOLTAGE V I(ON) (V) INPUT ON VOLTAGE V I(ON) (V) .


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