Document
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. AUDIO MUTING APPLICATION.
KRC881T~KRC886T
EPITAXIAL PLANAR NPN TRANSISTOR
E
FEATURES
High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.
C A F G
K 1
B
K 6
Low on resistance : Ron=1 (Typ.) (IB=5mA)
2
5 4
DIM A B C D E
D
F G H I J K L
3
MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + 2.8+0.2/-0.3 _ 0.2 1.9 +
0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55
J
C R1
6
5
4
B
Q1
Q2
1. 2. 3. 4. 5. 6.
Q1 Q1 Q2 Q2 Q2 Q1
EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR
E
1
2
3
MAXIMUM RATING (Ta=25
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VCBO VCEO VEBO IC PC * Tj Tstg 0.8 ) RATING 50 20 25 300 0.9 150 -55 150 UNIT V V V mA W
CHARACTERISTIC
* Package mounted on a ceramic board (600
MARK SPEC
TYPE KRC881T KRC882T KRC883T KRC884T KRC885T KRC886T hFE classification B MQB MRB MSB MTB MUB MVB
1 2 3
Marking
h FE Rank Type Name
6 5 4
2002. 12. 5
Revision No : 2
I
EQUIVALENT CIRCUIT
EQUIVALENT CIRCUIT (TOP VIEW)
L
G
J
H
TS6
Lot No.
1/2
KRC881T~KRC886T
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector-Emitter Saturation Voltage DC Current Gain KRC881T KRC882T Input Resistor KRC883T KRC884T KRC885T KRC886T Transition Frequency Collector Output Capacitance * Characteristic of Transistor Only. Note) hFE Classification B:350 1200 fT * Cob VCE=6V, IC=4mA, VCB=10V, IE=0, f=1MHz R1 SYMBOL BVCEO BVCBO BVEBO ICBO VCE(sat) hFE TEST CONDITION IC=1mA IC=50 A IE=50 A VCB=50V, IE=0 IC=30mA, IB=3mA VCE=2V, IC=4mA MIN. 20 50 25 350 TYP. 2.2 4.7 5.6 6.8 10 22 30 4.8 MAX. 0.1 0.1 1200 MHz pF k UNIT V V V A V
2002. 12. 5
Revision No : 2
2/2
.