SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES ᴌWith Bui...
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. ᴌReduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT C
R1 B
E
A G H
D
KRC110S~KRC114S
EPITAXIAL PLANAR
NPN TRANSISTOR
E L BL
23 1
PP
M 1. EMITTER 2. BASE 3. COLLECTOR
DIM A B C D E G H J
K L M
N P
MILLIMETERS 2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20
1.90 0.95 0.13+0.10/-0.05 0.00 - 0.10 0.55 0.20 MIN
1.00+0.20/-0.10 7
C N K J
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
VCBO VCEO VEBO
Collector Current
IC
RATING UNIT 50 V 50 V 5V 100 mA
CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage Temperature Range
SOT-23
SYMBOL PC Tj Tstg
RATING 200 150
-55ᴕ150
UNIT mW ᴱ ᴱ
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
KRC110S
KRC111S
Input Resistor
KRC112S
KRC113S
KRC114S
Note : * Characteristic of
Transistor Only.
ICBO IEBO hFE VCE(sat) fT *
VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA
R1
-
-
120
-
-
Marking
MARK SPEC
TYPE
KRC110S
MARK
NK
KRC111S NM
KRC112S NN
KRC113S NO
KRC114S NP
Type Name
TYP.
0.1 250 4.7 10 100 22 47
MAX.
100 100
0.3 -
UNIT ...