KRC111S

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. ᴌReduce a Quantity of Parts and Manufacturing Process. EQUIVALENT CIRCUIT C R1 B E A G H D KRC110S~KRC114S EPITAXIAL PLANAR NPN TRANSISTOR E L BL 23 1 PP M 1. EMITTER 2. BASE 3. COLLECTOR DIM A B C D E G H J K L M N P MILLIMETERS 2.93+_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 - 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 C N K J MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VCBO VCEO VEBO Collector Current IC RATING UNIT 50 V 50 V 5V 100 mA CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage Temperature Range SOT-23 SYMBOL PC Tj Tstg RATING 200 150 -55ᴕ150 UNIT mW ᴱ ᴱ ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency KRC110S KRC111S Input Resistor KRC112S KRC113S KRC114S Note : * Characteristic of Transistor Only. ICBO IEBO hFE VCE(sat) fT * VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA R1 - - 120 - - Marking MARK SPEC TYPE KRC110S MARK NK KRC111S NM KRC112S NN KRC113S NO KRC114S NP Type Name TYP. 0.1 250 4.7 10 100 22 47 MAX. 100 100 0.3 - UNIT ...