KRC114M

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. ᴌReduce a Quantity of Parts and Manufacturing Process. EQUIVALENT CIRCUIT C R1 B E J K D KRC110M~KRC114M EPITAXIAL PLANAR PNP TRANSISTOR B F A HM C EE 1 2 3N L 1. EMITTER 2. COLLECTOR 3. BASE G O DIM MILLIMETERS A 3.20 MAX B 4.30 MAX C 0.55 MAX D 2.40+_ 0.15 E 1.27 F 2.30 G 14.00+_ 0.50 H 0.60 MAX J 1.05 K 1.45 L 25 M 0.80 N 0.55 MAX O 0.75 TO-92M MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 50 50 5 100 400 150 -55ᴕ150 UNIT V V V mA mW ᴱ ᴱ 1998. 7. 8 Revision No : 3 1/4 KRC110M~KRC114M ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency KRC110M ICBO IEBO hFE VCE(sat) fT * KRC111M Input Resistor KRC112M KRC113M R1 KRC114M KRC110M Rise Time KRC111M KRC112M KRC113M tr KRC114M KRC110M Switching Time Storage Time KRC111M KRC112M KRC113M tstg KRC114M KRC110M Fall Time KRC111M KRC112M KRC113M tf KRC114M Note : * Characteristic of Transistor Only. TEST CONDITION VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA VO=5V VIN=5V RL=...