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KRC422

Korea Electronics

EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA KRC416~KRC422 EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AN...


Korea Electronics

KRC422

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SEMICONDUCTOR TECHNICAL DATA KRC416~KRC422 EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. Suffix U : Qualified to AEC-Q101. ex) KRC417-RTK/HU Suffix A : USM(1) Package. ex) KRC417-RTK/PA EQUIVALENT CIRCUIT OUT R1 IN R2 COMMON TYPE NO. KRC416 KRC417 KRC418 KRC419 KRC420 KRC421 R1(k ) 1 2.2 2.2 4.7 10 47 R2(k ) 10 2.2 10 10 4.7 10 MARK SPEC KRC422 100 100 TYPE KRC416 KRC417 KRC418 KRC419 MARK N2 N4 N5 N6 TYPE KRC420 KRC421 KRC422 MARK N7 N8 N9 Type Name Lot No. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Output Voltage Input Voltage Output Current Power Dissipation Junction Temperature Storage Temperature Range KRC416~422 KRC416 KRC417 KRC418 KRC419 KRC420 KRC421 KRC422 KRC416~422 2021. 04. 07 Revision No : 6 SYMBOL VO VI IO PD Tj Tstg A J G C A E M B M 2 D 1 3 J G L N K 1. EMITTER 2. BASE 3. COLLECTOR H N DIM MILLIMETERS A 2.00+_ 0.20 B 1.25+_ 0.15 C 0.90+_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 K 0.00~0.10 L 0.70 M 0.42 +_0.10 N 0.10 Min. USM E M B M 2 D 1 3 C N K 1. EMITTER 2. BASE 3. COLLECTOR DIM MILLIMETERS A 2.1+_ 0.1 B 1.25+_ 0.1 C 0.95+_ 0.1 D 0.3+_ 0.1 H E 2.275 +_ 0.125 G Typ 0.65 H 0.115 +_ 0.035 J Typ 1.3 K 0.05 +_0.05 M 0.5+_ 0.125 N 0.355 +_0.095 USM(1) RATING 5...




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