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NT511740C5J Dataheets PDF



Part Number NT511740C5J
Manufacturers Nanya Technology
Logo Nanya Technology
Description Fast Page Mode with EDO DRAM
Datasheet NT511740C5J DatasheetNT511740C5J Datasheet (PDF)

NT5117405J 4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO NT 511740C5J Data Sheet 1 NANYA TECHNOLOGY CORP. reserves the right to change products and specifications without notice. © NANYA TECHNOLOGY CORP NT5117405J 4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO TABLE OF CONTENTS 1. Description...3 2. Features.

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NT5117405J 4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO NT 511740C5J Data Sheet 1 NANYA TECHNOLOGY CORP. reserves the right to change products and specifications without notice. © NANYA TECHNOLOGY CORP NT5117405J 4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO TABLE OF CONTENTS 1. Description.............................................................................................3 2. Features.................................................................................................3 3. Product Family........................................................................................3 4. Pin Configuration....................................................................................4 5. Block Diagram........................................................................................5 6. Electrical Characteristics.......................................................................6 7. DC Characteristics.................................................................................7 8. AC Characteristics.................................................................................8~11 9. DRAM AC Timing Waveforms..............................................................12~18 2 NANYA TECHNOLOGY CORP. reserves the right to change products and specifications without notice. © NANYA TECHNOLOGY CORP NT5117405J 4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO 1. DESCRIPTION The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTC’s CMOS silicon gate technology. The NT511740C5J achieves high integration , high-speed operation , and lowpower consumption due to quadruple polysilicon double metal CMOS. The NT511740C5J is available in a 26/24-pin plastic SOJ. 2. FEATURES l l l l l l l l l 4,194,304-word x 4-bit configuration Single 5V power supply,+/-10% tolerance Input :TTL compatible , low input capacitance Output :TTL compatible , 3-state Refresh :2048 cycles/32 ms Fast page mode with EDO, read modify write capability /CAS before /RAS refresh, hidden refresh, /RAS-only refresh capability Multi-bit test mode capability Package options: 26/24-Pin 300 mil plastic SOJ 3. PRO D UCT FAM ILY Access Tim e (M ax.) Fam ily NT511740C5J-50 NT511740C5J-60 NT511740C5J-70 t RA C tA A 50ns 25ns 60 ns 30 ns 70 ns 35 ns t CA C 13ns 15 ns 20 ns t O EA 13ns 15 ns 20 ns (M in.) 84ns 104 ns 124 ns Operation(M ax.) Standby(M ax.) 660m W 605m W 5.5 m W 550 m W C ycle Time Power Dissipation (SOJ26/24-P300) (Product:NT511740C5J-XX) XX indicates speed rank. 3 NANYA TECHNOLOGY CORP. reserves the right to change products and specifications without notice. © NANYA TECHNOLOGY CORP NT5117405J 4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO 4. PIN CONFIGURATION (TOPVIEW) Vcc DQ1 DQ2 WE RAS NC 1 2 3 4 5 6 26 25 24 23 22 21 Vss DQ4 DQ3 CAS OE A9 A10 A0 A1 A2 A3 Vcc 8 9 10 11 12 13 19 18 17 16 15 14 A8 A7 A6 A5 A4 Vss 26/24-Pin Plastic SOJ Pin Name A0-A10 RAS CAS DQ1-DQ4 OE WE Vcc Vss NC Function Adress input Row Adress Strobe Column Adress Strobe Data Input/Data Output Output Enable Write Enable Power Supply (5v) Ground(0V) No Connection Note:The same power supply voltage must be provided to every Vcc pin , and the same GND voltage level must be provided to every Vss pin. 4 NANYA TECHNOLOGY CORP. reserves the right to change products and specifications without notice. © NANYA TECHNOLOGY CORP NT5117405J 4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO 5. BLOCK DIAGRAM RAS CAS Timing Generator Timing Generator 11 Column Address Buffer 11 Column Decoders Write Clock Generator WE OE 4 A0-A10 Internal Address Counter Output Buffers 4 Refresh Control Clock Sense Amplifiers 4 I/O Selector 4 4 DQ1-DQ4 Input Buffers 4 11 Row Address Buffer 11 Row Decoders Word Drivers Memory Cells VCC On Chip VBB Generator On Chip IVCC Generator VSS 5 NANYA TECHNOLOGY CORP. reserves the right to change products and specifications without notice. © NANYA TECHNOLOGY CORP NT5117405J 4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO 6. ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Parameter Voltage on Any Pin Relative to VSS Voltage on VCC Supply Relative to VSS Short Circuit Output Cuttent Po/WEr Dissipation Operation Temperature Storage Temperature Recommended Operating Conditions Parameter Po/WEr Supply Voltage Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min. 4.5 0 2.4 -0.3 Typ. 5.0 0 Symbol VIN,VOUT VCC IOS PD* Topr Tstg *:Ta = 25 o Rating -0.3 to VCC+0.3 -0.5 to 7 50 1 0 to 70 -55 to 150 C (Ta=0 C to70 Max. 5.5 0 VCC+0.3 0.8 o o Unit V V mA W o C o C C) Unit V V V V Capacitance (Vcc = 5V+/-10%,Ta=25 Symbol Typ. CIN1 CIN2 CI/O o Parameter Input Capacitance (A0-A10) C , f=1 MHZ) Max. Unit 5 7 7 pF pF pF Input Capacitance (/RAS,/CAS,/WE,/OE) Output Capacitance (DQ1-DQ4) 6 NANYA TECHNOLOGY CORP. reserves the right to change products and specifications withou.


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