2SD1616

DATA SHEET SILICON TRANSISTORS 2SD1616, 2SD1616A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A Complementary transistor with the 2SB1116 and 1116A PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(Pulse)* PT Tj Tstg Ratings 2SD1616 2SD1616A 60 120 50 6.0 1.0 2.0 0.75 150 −55 to +150 60 Unit V V V A A W °C °C * PW ≤ 10 ms, duty cycle ≤ 50% ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain DC base voltage Collector saturation voltage Base saturation voltage Output capacitance Gain bandwidth product Turn-on time Storage time Fall time Symbol ICBO IEBO hFE1** hFE2** VBE** VCE(sat)** VBE(sat)** Cob fT ton tstg tf Conditions VCB = 60 V, IE = 0 VEB = 6.0 V, IC = 0 VCE = 2.0 V, IC = 100 mA VCE = 2.0 V, IC = 1.0 A VCE = 2.0 V, IC = 50 mA IC = 1.0 A, IB = 50 mA IC = 1.0 A, IB = 50 mA VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 2.0 V, IC = 100 mA VCC = 10 V, IC = 100 mA IB1 = −IB2 = 10 mA VBE(off) = −2 to –3 V 100 135 81 600 640 0.15 0.9 19 160 0.07 0.95 0...